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NSV12100XV6T1G

产品描述Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR
产品类别半导体    分立半导体   
文件大小97KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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NSV12100XV6T1G概述

Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR

NSV12100XV6T1G规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
资格
Qualification
AEC-Q100
工厂包装数量
Factory Pack Quantity
4000

文档预览

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NSS12100XV6T1G
12 V, 1 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
http://onsemi.com
12 VOLTS, 1.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
300 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
High Current Capability (1 A)
High Power Handling (Up to 650 mW)
Low V
CE(s)
(150 mV Typical @ 500 mA)
Small Size
This is a Pb−Free Device
1
SOT−563
CASE 463A
STYLE 4
Benefits
High Specific Current and Power Capability Reduces Required PCB Area
Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
CM
ESD
I
C
Max
−12
−12
−5.0
−1.0
−2.0
Unit
Vdc
Vdc
Vdc
Adc
DEVICE MARKING
VE M
G
G
1
VE = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
HBM Class 3
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NSS12100XV6T1G
Package
Shipping
SOT−563 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
November, 2006
Rev. 0
1
Publication Order Number:
NSS12100XV6/D
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