SE20FD, SE20FG, SE20FJ
www.vishay.com
Vishay General Semiconductor
Surface-Mount Standard Rectifiers
FEATURES
• Low profile package
• Ideal for automated placement
Available
eSMP
®
Series
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
Top view
Bottom view
• Wave and reflow solderable
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMF
(DO-219AB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 2.0 A (T
A
= 125 °C)
I
R
T
J
max.
Package
Circuit configuration
2.0 A
200 V, 400 V, 600 V
35 A
0.85 V
5 μA
175 °C
SMF (DO-219AB)
Single
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in
commercial, industrial, and automotive applications.
MECHANICAL DATA
Case:
SMF (DO-219AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - for, halogen-free, and RoHS-compliant
Base P/NHM3 - for halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity:
color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
V
RRM
I
F(AV) (1)
I
F(AV) (2)
I
FSM
T
J
, T
STG
SYMBOL
SE20FD
CD
200
SE20FG
CG
400
2.0
1.7
35
-55 to +175
SE20FJ
CJ
600
V
A
A
°C
UNIT
Revision: 20-Apr-17
Document Number: 87724
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE20FD, SE20FG, SE20FJ
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
TEST CONDITIONS
I
F
= 2.0 A
Rated V
R
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F (1)
I
R (2)
t
rr
C
J
TYP.
0.96
0.85
-
7.6
920
13
MAX.
1.10
1.00
5
100
-
-
UNIT
V
Reverse current
Typical reverse recovery time
Typical junction capacitance
μA
ns
pF
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °c unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JM
(1)
SE20FD
SE20FG
130
20
SE20FJ
UNIT
°C/W
Note
(1)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient; R
JM
- junction to mount
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD
AEC-Q101-001
TEST TYPE
Human body model (contact mode)
TEST CONDITIONS
C = 100 pF, R = 1.5 k
SYMBOL
V
C
CLASS
H3B
VALUE
> 8 kV
ORDERING INFORMATION
(Example)
PREFERRED P/N
SE20FJ-M3/H
SE20FJ-M3/I
SE20FJHM3/H
(1)
SE20FJHM3/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.015
0.015
0.015
0.015
PREFERRED PACKAGE CODE
H
I
H
I
BASE QUANTITY
3000
10 000
3000
10 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 20-Apr-17
Document Number: 87724
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE20FD, SE20FG, SE20FJ
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
25
50
75
100
125
150
175
T
M
=measured on free air,
mounted on recommended PCB
T
M
measured on mounted
10 mm x 10 mm pad areas
100
T
A
= 175 °C
T
A
= 150 °C
10
T
A
= 125 °C
T
A
= 100 °C
1
Instantaneous Reverse Current (uA)
0.1
T
A
= 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Percent of Rated
Peak
Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
0.9
0.8
D = 0.8
D = 0.5
Junction Capacitance (pF)
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Average Power Loss (W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.2 0.4 0.6 0.8
1
D = 0.1
D = 0.2
D = 0.3
D = 1.0
10
T
D = t
p
/T
t
p
1
1.2 1.4 1.6 1.8
2
2.2
0.1
1
10
100
Average Forward Current (A)
Fig. 2 - Average Power Loss Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
Junction to Ambient
T
A
= 175 °C
T
A
= 150 °C
T
A
= 125 °C
100
1
T
A
= 100 °C
T
A
= 25 °C
10
0.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Instantaneous Forward Voltage (V)
1
0.01
0.1
1
10
100
1000
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 20-Apr-17
Document Number: 87724
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE20FD, SE20FG, SE20FJ
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in millimeters (inches)
0.85 (0.033)
0.35 (0.014)
Vishay General Semiconductor
0.25 (0.010)
0.1 (0.003)
0.1 (0.004)
5
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
Revision: 20-Apr-17
Document Number: 87724
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
5
SE20FD, SE20FG, SE20FJ
www.vishay.com
BLISTERTAPE DIMENSIONS
in millimeters:
SMF (DO-219AB)
Vishay General Semiconductor
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Revision: 20-Apr-17
Document Number: 87724
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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