IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= -10 V
26
6.2
8.6
Single
-50
0.28
FEATURES
•
•
•
•
•
•
•
P-channel versatility
Compact plastic package
Fast switching
Low drive current
Ease of paralleling
Excellent temperature stability
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
S
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The P-channel power MOSFETs are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel power MOSFETs such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
TO-220AB
G
G
D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
IRF9Z20PbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
SYMBOL
V
DS
V
GS
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
L = 100 μH
T
C
= 25 °C
c
LIMIT
-50
± 20
-9.7
-6.1
-39
0.32
UNIT
V
A
W/°C
A
A
W
°C
Linear Derating Factor
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche current)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
for 10 s
I
LM
I
L
P
D
T
J
, T
stg
-39
-2.2
40
-55 to +150
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L =100 μH, R
g
= 25
c. 0.063" (1.6 mm) from case.
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
1.0
-
MAX.
80
-
3.1
°C/W
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
GS
= ± 20 V
V
DS
= max. rating, V
GS
= 0 V
V
DS
= max. rating x 0,8, V
GS
= 0 V, T
J
=125°C
V
GS
= -10 V
I
D
= -5.6 A
b
b
MIN.
-50
-2.0
-
-
-
-
2.3
-
-
-
-
-
-
-
-
-
-
-
-
S
TYP.
-
-
-
-
-
0.20
3.5
480
320
58
17
4.1
5.7
8.2
57
12
25
4.5
7.5
MAX.
-
-4.0
± 500
-250
-1000
0.28
-
-
-
-
26
6.2
8.6
12
86
18
38
-
-
UNIT
V
V
nA
μA
S
V
DS
= 2 x V
GS
, I
DS
= -5.6 A
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 9
I
D
= -9.7 A, V
DS
= -0.8 max.
rating. see fig. 17
pF
V
GS
= -10 V
nC
V
DD
= -25 V, I
D
= -9.7 A,
R
g
= 18
,
R
D
= 2.4, see fig. 16 (MOSFET
switching times are essentially independent
of operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact
D
ns
G
nH
-
-
-
-
-
110
0.34
-9.7
-39
-6.3
280
0.85
A
V
ns
μC
G
S
T
J
= 25 °C, I
S
= - 9.7 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 9.7 A, dI/dt = 100 A/μs
b
-
56
0.17
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width
300 μs; duty cycle
2 %.
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
10
3
Vishay Siliconix
V
GS
= - 10, - 8 V
80 µs Pulse Test
-7V
Negative I
D
, Drain Current (A)
Negative I
D
, Drain Current (A)
5
2
Operation in this area limited
by R
DS(on)
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
12
10
2
5
2
9
10
µs
100
µs
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
-6V
10
5
2
1
ms
10
ms
DC
6
-5V
3
-4V
0
0
5
10
15
20
25
1
5
2
0.1
1
90121_04
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
2
5
10
2
5
10
2
90121_01
Negative V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Negative V
DS
, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
10
2
Negative I
D
, Drain Current (A)
5
80 µs Pulse Test
V
DS
= 2 x V
GS
5.0
80 µs Pulse Test
V
DS
<
- 50 V
T
J
= 25
°
C
g
fs
,Transconductance (S)
2
4.0
10
5
3.0
T
J
= 150
°
C
2
2.0
1
5
1.0
2
T
J
= 150
°
C
0
2
4
T
J
= 25
°
C
0.0
6
8
10
90121_06
0.1
0
4
8
12
16
20
90121_02
Negative V
GS,
Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
Negative I
D,
Drain Current (A)
Fig. 5 - Typical Transconductance vs. Drain Current
15
Negative I
DR
, Reverse Drain Current (A)
80 µs Pulse Test
V
GS
= - 10
10
2
5
Negative I
D
, Drain Current (A)
-8V
-7V
12
2
10
5
9
-6V
6
-5V
3
-4V
0
0
1
2
3
4
5
T
J
= 150
°
C
T
J
= 25
°
C
2
1
5
2
0.1
0
2
4
6
8
10
90121_03
Negative V
DS,
Drain-to-Source Voltage (V)
90121_07
Negative V
SD
, Source-to-Drain Voltage (V)
Fig. 3 - Typical Saturation Characteristics
Fig. 6 - Typical Source-Drain Diode Forward Voltage
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
Negative V
GS
, Gate-to-Source Voltage (V)
20
BV
DSS
, Drain-to-Source Breakdown
Voltage (Normalized)
1.25
I
D
= 1 mA
I
D
= - 9.7 A
1.15
16
V
SD
= - 40 V
12
1.05
0.95
8
0.85
4
For test circuit
see figure 17
0.75
- 60 - 40 - 20 0
90121_08
0
0
8
16
24
20 40 60 80 100 120 140 160
32
40
T
J
, Junction Temperature (°C)
90121_11
Q
G
, Total Gate Charge (nC)
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.0
R
DS(on)
, Drain-to-Source On Resistance
I
D
= - 9.7 A
V
GS
= - 10 V
2.0
80 µs Pulse Test
2.4
1.6
1.8
1.2
V
GS
= - 10 V
1.2
0.8
0.6
0.4
V
GS
= - 20 V
0.0
0
8
16
24
32
40
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
90121_12
90121_09
T
J
, Junction Temperature (°C)
Negative I
D
, Drain Current (A)
Fig. 8 - Normalized On-Resistance vs. Temperature
Fig. 11 - Typical On-Resistance vs. Drain Current
1000
Negative I
D
, Drain Current (A)
800
C, Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gs
C
gd
/ (C
gs
+ C
gd
)
≈
C
ds
+ C
gd
C
iss
10
8
IRF9Z20, SiHF9Z20
6
IRF9Z22, SiHF9Z22
4
600
400
C
oss
200
C
rss
0
1
90121_10
2
5
2
10
2
5
0
10
2
90121_13
25
50
75
100
125
150
Negative V
DS,
Drain-to-Source Voltage (V)
T
C
, Case Temperature (°C)
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 12 - Maximum Drain Current vs. Case Temperature
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
Fig. 13a - Unclamped Inductive Test Circuit
Fig. 13b - Unclamped Inductive Load Test Waveforms
10
Thermal Response (Z
thJC
)
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
(Thermal Response)
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-5
10
-4
10
-3
10
-2
0.1
1
10
P
DM
10
-2
90121_05
t
1
, Rectangular Pulse Duration (s)
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Fig. 15 - Switching Time Test Circuit
Fig. 16 - Gate Charge Test Circuit
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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