Si2320DS
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
200
r
DS(on)
(W)
7 @ V
GS
= 10 V
I
D
(A)
"0.28
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2320DS (D0)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
b
Avalanche Current
b
L = 0.1 mH
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
I
S
5 sec
"20
"0.28
"0.22
Steady State
"200
Unit
V
"0.22
"0.17
"0.5
"0.5
0.013
"1
mJ
A
0.75
W
0.48
–55 to 150
_C
A
1.25
P
D
T
J
, T
stg
0.80
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
www.vishay.com
S
FaxBack 408-970-5600
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
2-1
Si2320DS
Vishay Siliconix
New Product
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
V(
BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 160 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 70_C
V
DS
w
15 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 0.2 A
V
DS
= 15 V, I
D
= 0.4 A
I
S
= 1 A, V
GS
= 0 V
0.5
5.8
13
1.2
7
200
V
2
"100
1
75
nA
mA
A
W
S
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= 100 V, V
GS
= 10 V, I
D
= 0.2 A
V
V
02
1.1
0.31
0.375
1.6
nC
C
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Drain Reverse Recovery Time
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1 A, di/dt = 100 A/ms
V
DD
= 100 V, R
L
= 500
W
V,
I
D
^
0.2 A, V
GEN
= 10 V R
G
= 6
W
02A
V,
6
9
9
65
105
10
15
ns
15
100
160
ns
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
V
GS
= 10, 9 V
0.8
I
D
– Drain Current (A)
8V
I
D
– Drain Current (A)
0.8
1.0
Transfer Characteristics
0.6
7V
0.6
0.4
6V
0.2
4, 3 V
0
0
2
4
6
8
10
5V
0.4
T
C
= 125_C
0.2
25_C
0
0
2
4
6
8
10
–55_C
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
S
FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
2-2
Si2320DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
12
r
DS(on)
– On-Resistance (
W
)
70
60
C – Capacitance (pF)
50
40
30
20
C
oss
2
10
0
0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
C
rss
Vishay Siliconix
Capacitance
10
C
iss
8
V
GS
= 10 V
6
4
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
20
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 100 V
I
D
= 0.2 A
16
2.5
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 0.2 A
2.0
12
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.0
1.5
2.0
1.5
8
1.0
4
0.5
0
0
0.5
Q
g
– Total Gate Charge (nC)
0
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
20
On-Resistance vs. Gate-to-Source Voltage
1
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
16
I
D
= 0.2 A
12
I
S
– Source Current (A)
0.1
8
0.01
T
J
= 25_C
4
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si2320DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.9
60
50
I
D
= 250
mA
0.3
Power (W)
Single Pulse Power
0.6
V
GS(th)
Variance (V)
40
T
A
= 25_C
30
0.0
20
–0.3
10
–0.6
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 166_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
4. Surface Mounted
10
100
600
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
