2SA2029M3
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT−723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
www.onsemi.com
•
•
•
•
Reduces Board Space
High h
FE
, 210 −460 (Typical)
Low V
CE(sat)
, < 0.5 V
ESD Performance: Human Body Model;
u
2000 V,
Machine Model;
u
200 V
•
Available in 4 mm, 8000 / Tape & Reel
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These are Pb−Free Devices
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
−60
−50
−6.0
−100
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−723
CASE 631AA
1
F9 M
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
265
150
−55 ~ + 150
Unit
mW
°C
°C
F9 = Specific Device Code
M = Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
ORDERING INFORMATION
Device
2SA2029M3T5G
Package
SOT−723
(Pb−Free)
SOT−723
(Pb−Free)
Shipping
†
8000 / Tape &
Reel
8000 / Tape &
Reel
NSV2SA2029M3T5G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
October, 2015 − Rev. 5
Publication Order Number:
2SA2029M3/D
2SA2029M3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Collector−Base Breakdown Voltage (I
C
= −50
mAdc,
I
E
= 0)
Collector−Emitter Breakdown Voltage (I
C
= −1.0 mAdc, I
B
= 0)
Emitter−Base Breakdown Voltage (I
E
= −50
mAdc,
I
E
= 0)
Collector−Base Cutoff Current (V
CB
= −30 Vdc, I
E
= 0)
Emitter−Base Cutoff Current (V
EB
= −7.0 Vdc, I
B
= 0)
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
DC Current Gain (Note 2)
(V
CE
= −6.0 Vdc, I
C
= −1.0 mAdc)
Transition Frequency
(V
CE
= −12 Vdc, I
C
= −2.0 mAdc, f = 30 MHz)
Output Capacitance (V
CB
= −12 Vdc, I
E
= 0 Adc, f = 1.0 MHz)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
−
h
FE
120
f
T
−
C
OB
−
140
3.5
−
−
pF
−
560
MHz
−
−0.5
−
Min
−60
−50
−6.0
−
−
Typ
−
−
−
−
−
Max
−
−
−
−0.5
−0.1
Unit
Vdc
Vdc
Vdc
nA
mA
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
www.onsemi.com
2
2SA2029M3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
−X−
D
b1
3
A
−Y−
E
1
2
2X
H
E
b
0.08 X Y
C
SIDE VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
DIM
A
b
b1
C
D
E
e
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
2X
e
TOP VIEW
3X
1
L
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
PACKAGE
OUTLINE
0.27
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
5
2SA2029M3/D
能源基础设施
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