StrongIRFET™
IRFB7746PbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
75V
9.0m
10.6m
59A
G
S
max
I
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
Halogen-free
G
Gate
S
D
G
TO-220AB
D
Drain
S
Source
Base part number
IRFB7746PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB7746PbF
RDS(on), Drain-to -Source On Resistance (m
)
25
ID = 35A
60
50
20
ID, Drain Current (A)
40
30
20
10
15
T J = 125°C
10
T J = 25°C
5
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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© 2014 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
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November 7, 2014
Absolute Maximum Rating
IRFB7746PbF
Units
A
W
W/°C
V
°C
Parameter
Max.
Continuous Drain Current, V
GS
@ 10V
59
Continuous Drain Current, V
GS
@ 10V
42
Pulsed Drain Current
219
Maximum Power Dissipation
99
Linear Derating Factor
0.66
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
Symbol
Max.
Parameter
111
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
154
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
1.52
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient
R
JA
–––
62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Units
mJ
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
0.06 ––– V/°C Reference to 25°C, I
D
= 1mA
9.0 10.6 m V
GS
= 10V, I
D
= 35A
10.4 –––
V
GS
= 6.0V, I
D
= 18A
–––
3.7
V V
DS
= V
GS
, I
D
= 100µA
–––
1.0
V
DS
=75 V, V
GS
= 0V
µA
––– 150
V
DS
=75V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
1.6
–––
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 170µH, R
G
= 50, I
AS
= 35A, V
GS
=10V.
I
SD
35A, di/dt
432A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 18A, V
GS
=10V.
2
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November 7, 2014
IRFB7746PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Effective Output Capacitance
(Time Related)
Min.
132
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
55
12
16
39
9.9
36
33
30
3049
255
150
236
300
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 35A
83
I
D
= 35A
–––
V
DS
= 38V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 38V
–––
I
D
= 35A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 7
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
8.0
28
33
30
42
1.8
Max. Units
59
A
219
1.2
–––
–––
–––
–––
–––
–––
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
T
J
= 25°C,I
S
= 35A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 35A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 35A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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November 7, 2014
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
IRFB7746PbF
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.0V
4.0V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
BOTTOM
10
10
1
4.0V
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
4.0V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
ID = 35A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
V GS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID= 35A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 60V
V DS= 38V
V DS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
70
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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November 7, 2014
1000
IRFB7746PbF
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1msec
100µsec
100
TJ = 175°C
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1
10msec
0.1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10
TJ = 25°C
V GS = 0V
1.0
0.2
0.6
1.0
1.4
V SD, Source-to-Drain Voltage (V)
0.01
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.6
95
Id = 1.0mA
0.5
90
0.4
Energy (µJ)
85
0.3
0.2
80
0.1
0.0
75
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2014 International Rectifier
Submit Datasheet Feedback
November 7, 2014
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