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IS61LF6436A-8.5TQI

产品描述SRAM 2Mb 64Kx36 8.5ns Sync SRAM 3.3v
产品类别存储    存储   
文件大小332KB,共16页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
下载文档 详细参数 选型对比 全文预览

IS61LF6436A-8.5TQI概述

SRAM 2Mb 64Kx36 8.5ns Sync SRAM 3.3v

IS61LF6436A-8.5TQI规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称ISSI(芯成半导体)
零件包装代码QFP
包装说明TQFP-100
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Factory Lead Time12 weeks
最长访问时间8.5 ns
其他特性FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)90 MHz
I/O 类型COMMON
JESD-30 代码R-PQFP-G100
JESD-609代码e0
长度20 mm
内存密度2359296 bit
内存集成电路类型CACHE SRAM
内存宽度36
功能数量1
端子数量100
字数65536 words
字数代码64000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP100,.63X.87
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.035 A
最小待机电流3.14 V
最大压摆率0.15 mA
最大供电电压 (Vsup)3.63 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm
Base Number Matches1

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IS61LF6436A
IS61LF6432A
®
Long-term Support
World Class Quality
64Kx32, 64Kx36
SYNCHRONOUS FLOW-THROUGH STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin TQFP package
• Power Supply:
+3.3V V
dd
+3.3V or 2.5V V
ddq
• Control pins mode upon power-up:
– MODE in interleave burst mode
– ZZ in normal operation mode
• Industrial Temperature Available:
(-40
o
C to +85
o
C)
• Lead-free available
MAY 2017
DESCRIPTION
The
ISSI
IS61LF6432A and IS61LF6436A are high-speed,
low-power synchronous static RAM designed to provide
a burstable, high-performance, memory. IS61LF6432A is
organized as 65,536 words by 32 bits. IS61LF6436A is
organized as 65,536 words by 36 bits. They are fabricated
with
ISSI
's advanced CMOS technology. The device inte-
grates a 2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single monolithic circuit.
All synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be writ-
ten. BWa controls DQa, BWb controls DQb, BWc controls
DQc, BWd controls DQd, conditioned by BWE being LOW.
A LOW on GW input would cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally by the IS61LF6432A/36A and controlled by the
ADV (burst address advance) input pin.
The mode pin is used to select the burst sequence order.
Linear burst is achieved when this pin is tied LOW. Interleave
burst is achieved when this pin is tied HIGH or left floating.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
8.5
8.5
11
90
Unit
ns
ns
MHz
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-
pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon
Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B1
05/08/2017
1

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