S i 4 3 11- B 1 2 / B 2 1
315/433.92 MH
Z
FSK R
ECEIVER
Features
Single chip receiver with only six
external components
Selectable 315/433.92 MHz carrier
frequency
Supports FSK modulation
High sensitivity (–104 dBm @ 5 kbps)
Excellent interference rejection
Selectable IF bandwidths
Automatic Frequency Centering (AFC)
Data rates up to 10 kbps
Direct battery operation with on-
chip low drop out (LDO) voltage
regulator
16 MHz crystal oscillator support
3x3x0.85 mm 20L QFN package
(RoHS compliant)
–40 to +85 °C temperature range
Applications
Satellite set-top box receivers
Remote controls, IR
replacement/extension
Garage and gate door openers
Home automation and security
Ordering Information:
See page 14.
Remote keyless entry
After market alarms
Telemetry
Wireless point of sale
Toys
Pin Assignments
Si4311
(Top View)
DEV0
17
10
XTL2
DEV1
16
15 BT0
14 BT1
13 DOUT
12 GND
7
GND
8
VDD
9
XTL1
11 VDD
NC
NC
19
NC
18
Description
The Si4311 is a fully-integrated FSK CMOS RF receiver that operates in the
unlicensed 315 and 433.92 MHz ultra high frequency (UHF) bands. It is designed
for high-volume, cost-sensitive RF receiver applications, such as set-top box RF
receivers, remote controls, garage door openers, home automation, security,
remote keyless entry systems, wireless POS, and telemetry. The Si4311 offers
industry-leading RF performance, high integration, flexibility, low BOM, small
board area, and ease of design. No production alignment is necessary as all RF
functions are integrated into the device.
VDD
1
RFGND 2
RX_IN 3
RST 4
AFC 5
6
315/434
20
GND
PAD
Functional Block Diagram
Antenna
RX_IN
LNA
AGC
2.7 – 3.6 V
VDD
GND
LDO
AFC
XTAL
OSC
PGA
ADC
ADC
Si4311
DOUT
DSP
MCU
BASEBAND
PROCESSOR
SQUELCH
Patents pending.
AFC
315/434
DEV[1:0]
BT[1:0]
RST
16 MHz
Rev. 1.0 5/12
Copyright © 2012 by Silicon Laboratories
Si4311-B12/B21
Si4311-B12/B21
2
Rev. 1.0
Si4311-B12/B21
T
ABLE O F
C
ONTENTS
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Typical Application Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1. Typical Application Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1. Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.2. Receiver Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.3. Carrier Frequency Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.4. Bit Time BT[1:0] Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.5. Frequency Deviation Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.6. Automatic Frequency Centering (AFC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.7. Low Noise Amplifier Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.8. Crystal Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
3.9. Reset Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4. Pin Descriptions: Si4311-B11-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6. Package Outline: Si4311-B11-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7. PCB Land Pattern: Si4311-B11-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8. Package Markings (Top Marks) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
8.1. Si4311 Top Mark . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
8.2. Top Mark Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Rev. 1.0
3
Si4311-B12/B21
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Parameter
Supply Voltage
Supply Voltage Powerup Rise Time
Ambient Temperature
Symbol
V
DD
V
DD-RISE
T
A
Test Condition
Min
2.7
10
–40
Typ
3.3
—
25
Max
3.6
—
85
Unit
V
μs
°C
*Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V
DD
= 3.3 V and 25
C
unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. DC Characteristics
(T
A
= 25 °C, V
DD
= 3.3 V, R
s
= 50
Ω,
F
RF
= 433.92 MHz unless otherwise noted)
Parameter
Supply Current
Reset Supply Current
High Level Input Voltage
1
Low Level Input Voltage
1
High Level Input Current
1
Low Level Input Current
1
High Level Output Voltage
2
Low Level Output Voltage
2
Symbol
I
VDD
I
RST
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
Test Condition
Min
—
Typ
20
2
—
—
—
—
—
—
Max
—
TBD
V
DD
+ 0.3
0.3 x V
DD
10
10
—
0.2 x V
DD
Unit
mA
µA
V
V
µA
µA
V
V
Reset asserted
—
0.7 x V
DD
–0.3
V
IN
= V
DD
= 3.6 V
V
IN
= 0 V, V
DD
= 3.6 V
I
OUT
= 500 µA
I
OUT
= –500 µA
–10
–10
0.8 x V
DD
—
Notes:
1.
For input pins 315/434, AFC, BT[1:0], and DEV[1:0].
2.
For output pin DOUT.
Table 3. Reset Timing Characteristics
(V
DD
= 3.3 V, T
A
= 25 °C)
Parameter
RST Pulse Width
Symbol
t
SRST
Min
100
Typ
—
Max
—
Unit
µs
t
SRST
RST
70%
30%
Figure 1. Reset Timing
4
Rev. 1.0
Si4311-B12/B21
Table 4. Si4311 Receiver Characteristics
(T
A
= 25 °C, V
DD
= 3.3 V, R
s
= 50
Ω,
F
RF
= 433.92 MHz unless otherwise noted)
Parameter
Symbol
Test Condition
1.0 kbps,
f
= 50 kHz, xtal = ±20 ppm,
315 MHz
2
Min
—
–90
—
–90
—
–90
—
–90
—
Typ
–105
–101
–103
–100
–111
–110
–103
–102
—
Max
—
—
—
—
—
—
—
—
10
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
kbps
Sensitivity @ BER =
Si4311-B12
10
-3 (Note 1)
10 kbps,
f
= 50 kHz, xtal = ±20 ppm,
315 MHz
2
1.0 kbps,
f
= 50 kHz, xtal = ±20 ppm,
433.92 MHz
2
10 kbps,
f
= 50 kHz, xtal = ±20 ppm,
433.92 MHz
2
1.0 kbps,
f
= 50 kHz, xtal = ±20 ppm,
315 MHz
2
Sensitivity @ BER =
Si4311-B21
10
-3 (Note 1)
10 kbps,
f
= 50 kHz, xtal = ±20 ppm,
315 MHz
2
1.0 kbps,
f
= 50 kHz, xtal = ±20 ppm,
433.92 MHz
2
10 kbps,
f
= 50 kHz, xtal = ±20 ppm,
433.92 MHz
2
Data Rate
3
Adjacent Channel Rejection
±200 kHz
1
Desired signal is 3 dB above sensitivity
(BER = 10
–3
), unmodulated interferer
is at ±200 kHz, rejection measured as TBD
difference between desired signal and
interferer level in dB when BER = 10
–3
Desired signal is 3 dB above sensitivity
(BER = 10
–3
), unmodulated interferer
is at ±400 kHz, rejection measured as
difference between desired signal and
interferer level in dB when BER = 10
–3
±2 MHz, 2.4 kbps, desired signal is
3 dB above sensitivity, CW interferer
level is increased until BER = 10
–3
±10 MHz, 2.4 kbps, desired signal is
3 dB above sensitivity, CW interferer
level is increased until BER = 10
–3
35
—
dB
Alternate Channel Rejection
±400 kHz
1,2
Image Rejection, IF = 128 kHz
1,2
—
55
—
dB
—
—
35
65
—
—
dB
dB
Blocking
1,2
—
—
70
8
—
—
dB
dBm
Maximum RF Input Power
1,2
Notes:
1.
1.0 kbps,
f
= 50 kHz, xtal = ±20 ppm, AFC = 0, BT[1:0] = 00, DEV[1:0] = 01.
2.
Guaranteed by characterization.
3.
Guaranteed by design.
Rev. 1.0
5
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