IRG7PG35UPbF
IRG7PG35U-EPbF
C
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low V
CE (ON)
trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Tight parameter distribution
Lead-free package
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to low
V
CE(on)
and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Applications
U.P.S.
Welding
Solar Inverter
Induction heating
Base part number
IRG7PG35UPbF
IRG7PG35U-EPbF
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
V
CES
I
C
@ T
C
= 25°C
Continuous Collector Current (Silicon Limited)
I
C
@ T
C
= 100°C Continuous Collector Current (Silicon Limited)
I
CM
Pulse Collector Current, V
GE
= 15V
I
LM
Clamped Inductive Load Current, V
GE
= 20V
V
GE
Continuous Gate-to-Emitter Voltage
P
D
@ T
C
= 25°C Maximum Power Dissipation
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
V
CES
= 1000V
I
C
= 35A, T
C
= 100°C
G
E
T
J(MAX)
= 175°C
n-channel
C
V
CE(ON)
typ. = 1.9V
@ I
C
= 20A
C
G
C
E
GC
E
IRG7PG35UPbF
TO-247AC
IRG7PG35U-EPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Standard Pack
Form
Quantity
Tube
Tube
25
25
Orderable Part Number
IRG7PG35UPbF
IRG7PG35U-EPbF
Max.
1000
55
35
60
80
±30
210
105
-55 to +175
Units
V
A
V
W
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
R
θJC
R
θCS
R
θJA
Parameter
(IGBT) Junction-to-Case (IGBT)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.70
–––
40
Units
°C/W
1
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April 14, 2014
IRG7PG35UPbF/IRG7PG35U-EPbF
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 100µA
—
V/°C V
GE
= 0V, I
C
= 1.0mA (25°C-150°C)
2.2
I
C
= 20A, V
GE
= 15V, T
J
= 25°C
—
V
I
C
= 20A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 20A, V
GE
= 15V, T
J
= 175°C
6.0
V
V
CE
= V
GE
, I
C
= 600µA
—
mV/°C V
CE
= V
GE
, I
C
= 600µA (25°C-150°C)
—
S
V
CE
= 50V, I
C
= 20A, PW = 30µs
100
µA
V
GE
= 0V, V
CE
= 1000V
—
V
GE
= 0V, V
CE
= 1000V, T
J
= 175°C
±100
nA V
GE
= ±30V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1000
—
—
1.2
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
—
1.9
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
2.3
—
2.4
V
GE(th)
Gate Threshold Voltage
3.0
—
—
-16
V
GE(th)
/T
J
Gate Threshold Voltage temp coefficient.
gfe
Forward Transconductance
—
22
I
CES
Collector-to-Emitter Leakage Current
—
2.0
—
2000
I
GES
Gate-to-Emitter Leakage Current
—
—
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Q
g
Total Gate Charge
—
85
Q
ge
Gate-to-Emitter Charge
—
15
Q
gc
Gate-to-Collector Charge
—
35
E
on
Turn-On Switching Loss
—
1060
E
off
Turn-Off Switching Loss
—
620
E
total
Total Switching Loss
—
1680
t
d(on)
Turn-On delay time
—
30
t
r
Rise time
—
15
t
d(off)
Turn-Off delay time
—
160
t
f
Fall time
—
80
E
on
Turn-On Switching Loss
—
1880
E
off
Turn-Off Switching Loss
—
1140
E
total
Total Switching Loss
—
3020
t
d(on)
Turn-On delay time
—
25
t
r
Rise time
—
20
t
d(off)
Turn-Off delay time
—
200
t
f
Fall time
—
200
C
ies
Input Capacitance
—
1940
C
oes
Output Capacitance
—
60
C
res
Reverse Transfer Capacitance
—
40
RBSOA
Reverse Bias Safe Operating Area
Max. Units
Conditions
—
I
C
= 20A
nC V
GE
= 15V
—
V
CC
= 600V
—
—
µJ
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
—
—
R
G
= 10, L = 200µH, T
J
= 25°C
Energy losses include tail & diode
—
ns
reverse recovery
—
Diode clamp the same as
—
IRG7PH35UDPbF
—
—
µJ
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
—
—
R
G
= 10, L = 200µH, T
J
= 175°C
Energy losses include tail & diode
—
ns
reverse recovery
—
Diode clamp the same as
—
IRG7PH35UDPbF
—
—
V
GE
= 0V
pF V
CC
= 30V
—
f = 1.0Mhz
—
T
J
= 175°C, I
C
= 80A
FULL SQUARE
V
CC
= 800V, Vp
≤
1000V
Rg = 10, V
GE
= +20V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, R
G
= 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
is measured at T
J
of approximately 90°C.
2
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April 14, 2014
45
40
35
Load Current ( A )
IRG7PG35UPbF/IRG7PG35U-EPbF
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
30
25
20
Square Wave:
15
10
5
0
0.1
V
CC
I
Diode as specified
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
60
50
40
30
20
10
0
25
50
75
100
TC (°C)
125
150
175
250
200
Ptot (W)
IC (A)
150
100
50
0
0
25
50
75
100
125
150
175
TC (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
100
1000
Fig. 3
- Power Dissipation vs.
Case Temperature
10
IC (A)
10 µs
IC (A)
100
100 µs
1
1ms
DC
0.1
1
10
100
V CE (V)
1000
10000
10
1
10
100
VCE (V)
1000
10000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
= 15V
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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April 14, 2014
80
70
60
50
ICE (A)
IRG7PG35UPbF/IRG7PG35U-EPbF
80
VGE = 18V
VGE = 15V
70
60
50
ICE (A)
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 18V
VGE = 15V
VGE = 12V
40
30
20
10
0
0
2
4
6
8
10
40
30
20
10
0
0
2
4
6
VGE = 10V
VGE = 8.0V
8
10
VCE (V)
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 30µs
80
70
60
50
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 30µs
8
7
6
VCE (V)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
5
4
3
2
1
4
8
40
30
20
10
0
0
2
4
6
8
10
ICE = 10A
ICE = 20A
ICE = 40A
12
VGE (V)
16
20
VCE (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 30µs
8
7
6
VCE (V)
8
7
6
VCE (V)
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
ICE = 10A
ICE = 20A
ICE = 40A
5
4
3
2
1
5
10
ICE = 10A
ICE = 20A
ICE = 40A
5
4
3
2
1
15
VGE (V)
20
5
10
VGE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Submit Datasheet Feedback
April 14, 2014
80
IC, Collector-to-Emitter Current (A)
IRG7PG35UPbF/IRG7PG35U-EPbF
4000
70
60
Energy (µJ)
3000
EON
50
40
30
20
10
0
4
5
6
7
8
9
10
VGE, Gate-to-Emitter Voltage (V)
TJ = 25°C
TJ = 175°C
2000
EOFF
1000
0
0
10
20
IC (A)
30
40
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 30µs
1000
tdOFF
Swiching Time (ns)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 680µH; V
CE
= 600V, R
G
= 10; V
GE
= 15V
3500
3000
EON
2500
Energy (µJ)
100
tF
tdON
10
tR
2000
1500
1000
EOFF
1
0
10
20
IC (A)
30
40
500
0
20
40
60
80
100
RG ()
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 680µH; V
CE
= 600V, R
G
= 10; V
GE
= 15V
10000
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 680µH; V
CE
= 600V, I
CE
= 20A; V
GE
= 15V
10000
Cies
Swiching Time (ns)
1000
Capacitance (pF)
tdOFF
1000
100
tdON
tR
0
20
40
tF
100
Coes
Cres
10
10
60
80
100
0
100
200
300
VCE (V)
400
500
600
RG ()
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 680µH; V
CE
= 600V, I
CE
= 20A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
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April 14, 2014
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