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CAT28F001LI-12B

产品描述NOR Flash (128x8) 1M 120ns
产品类别存储    存储   
文件大小102KB,共18页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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CAT28F001LI-12B概述

NOR Flash (128x8) 1M 120ns

CAT28F001LI-12B规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
零件包装代码DIP
包装说明LEAD AND HALOGEN FREE, PLASTIC, DIP-32
针数32
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间120 ns
其他特性BOTTOM BOOT BLOCK
启动块BOTTOM
命令用户界面YES
数据轮询NO
耐久性100000 Write/Erase Cycles
JESD-30 代码R-PDIP-T32
JESD-609代码e3
长度42.03 mm
内存密度1048576 bit
内存集成电路类型FLASH
内存宽度8
功能数量1
部门数/规模1,2,1
端子数量32
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX8
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP32,.6
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
编程电压12 V
认证状态Not Qualified
座面最大高度5.08 mm
部门规模8K,4K,112K
最大待机电流0.000001 A
最大压摆率0.03 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子面层Tin (Sn)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
切换位NO
类型NOR TYPE
宽度15.24 mm
Base Number Matches1

文档预览

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CAT28F001
1 Megabit CMOS Boot Block
Flash Memory
FEATURES
s
Fast Read Access Time: 90/120 ns
s
On-Chip Address and Data Latches
s
Blocked Architecture
Licensed Intel
second source
s
Deep Powerdown Mode
s
s
s
s
s
— One 8 KB Boot Block w/ Lock Out
• Top or Bottom Locations
— Two 4 KB Parameter Blocks
— One 112 KB Main Block
Low Power CMOS Operation
12.0V
±
5% Programming and Erase Voltage
Automated Program & Erase Algorithms
High Speed Programming
Commercial, Industrial and Automotive
Temperature Ranges
s
s
s
s
s
s
— 0.05
µ
A I
CC
Typical
— 0.8
µ
A I
PP
Typical
Hardware Data Protection
Electronic Signature
100,000 Program/Erase Cycles and 10 Year
Data Retention
JEDEC Standard Pinouts:
— 32 pin DIP
— 32 pin PLCC
— 32 pin TSOP
Reset/Deep Power Down Mode
"Green" Package Options Available
DESCRIPTION
The CAT28F001 is a high speed 128K X 8 bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after sale
code updates.
The CAT28F001 has a blocked architecture with one 8
KB Boot Block, two 4 KB Parameter Blocks and one 112
KB Main Block. The Boot Block section can be at the top
or bottom of the memory map and includes a reprogram-
ming write lock out feature to guarantee data integrity. It
is designed to contain secure code which will bring up
the system minimally and download code to other loca-
tions of CAT28F001.
The CAT28F001 is designed with a signature mode
which allows the user to identify the IC manufacturer and
device type. The CAT28F001 is also designed with on-
Chip Address Latches, Data Latches, Programming and
Erase Algorithms.
The CAT28F001 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, PLCC or TSOP packages.
BLOCK DIAGRAM
I/O0–I/O7
ADDRESS
COUNTER
I/O BUFFERS
WRITE STATE
MACHINE
RP
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
ERASE VOLTAGE
SWITCH
STATUS
REGISTER
CE
OE
ADDRESS LATCH
Y-GATING
Y-DECODER
8K-BYTE BOOT BLOCK
4K-BYTE PARAMETER BLOCK
4K-BYTE PARAMETER BLOCK
112K-BYTE MAIN BLOCK
A0–A16
VOLTAGE VERIFY
SWITCH
X-DECODER
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
COMPARATOR
1
Doc. No. MD-1078, Rev. K

CAT28F001LI-12B相似产品对比

CAT28F001LI-12B CAT28F001G-90B CAT28F001L-12B CAT28F001GI-12TT CAT28F001G-12B CAT28F001GI-90T CAT28F001GI-12B CAT28F001L-12T CAT28F001H-12T CAT28F001L-90B
描述 NOR Flash (128x8) 1M 120ns NOR Flash (128x8) 1M 90ns NOR Flash (128x8) 1M 120ns NOR Flash 1 Megabit Boot Block Flash Memory NOR Flash (128x8) 1M 120ns NOR Flash (128x8) 1M 90ns NOR Flash (128x8) 1M 120ns NOR Flash (128x8) 1M 120ns NOR Flash (128x8) 1M 120ns NOR Flash (128x8) 1M 90ns
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 DIP QFJ DIP QFJ QFJ QFJ QFJ DIP TSOP DIP
包装说明 LEAD AND HALOGEN FREE, PLASTIC, DIP-32 LEAD AND HALOGEN FREE, PLASTIC, LCC-32 LEAD AND HALOGEN FREE, PLASTIC, DIP-32 LEAD AND HALOGEN FREE, PLASTIC, LCC-32 LEAD AND HALOGEN FREE, PLASTIC, LCC-32 LEAD AND HALOGEN FREE, PLASTIC, LCC-32 LEAD AND HALOGEN FREE, PLASTIC, LCC-32 LEAD AND HALOGEN FREE, PLASTIC, DIP-32 LEAD AND HALOGEN FREE, 8 X 20 MM, TSOP-32 LEAD AND HALOGEN FREE, PLASTIC, DIP-32
针数 32 32 32 32 32 32 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 120 ns 90 ns 120 ns 120 ns 120 ns 90 ns 120 ns 120 ns 120 ns 90 ns
其他特性 BOTTOM BOOT BLOCK BOTTOM BOOT BLOCK BOTTOM BOOT BLOCK TOP BOOT BLOCK BOTTOM BOOT BLOCK TOP BOOT BLOCK BOTTOM BOOT BLOCK TOP BOOT BLOCK TOP BOOT BLOCK BOTTOM BOOT BLOCK
启动块 BOTTOM BOTTOM BOTTOM TOP BOTTOM TOP BOTTOM TOP TOP BOTTOM
命令用户界面 YES YES YES YES YES YES YES YES YES YES
数据轮询 NO NO NO NO NO NO NO NO NO NO
耐久性 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles
JESD-30 代码 R-PDIP-T32 R-PQCC-J32 R-PDIP-T32 R-PQCC-J32 R-PQCC-J32 R-PQCC-J32 R-PQCC-J32 R-PDIP-T32 R-PDSO-G32 R-PDIP-T32
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3 e3 e3
长度 42.03 mm 13.97 mm 42.03 mm 13.97 mm 13.97 mm 13.97 mm 13.97 mm 42.03 mm 18.4 mm 42.03 mm
内存密度 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH
内存宽度 8 8 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1 1 1
部门数/规模 1,2,1 1,2,1 1,2,1 1,2,1 1,2,1 1,2,1 1,2,1 1,2,1 1,2,1 1,2,1
端子数量 32 32 32 32 32 32 32 32 32 32
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 70 °C 70 °C 85 °C 70 °C 85 °C 85 °C 70 °C 70 °C 70 °C
组织 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP QCCJ DIP QCCJ QCCJ QCCJ QCCJ DIP TSOP1 DIP
封装等效代码 DIP32,.6 LDCC32,.5X.6 DIP32,.6 LDCC32,.5X.6 LDCC32,.5X.6 LDCC32,.5X.6 LDCC32,.5X.6 DIP32,.6 TSSOP32,.8,20 DIP32,.6
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE CHIP CARRIER IN-LINE CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER IN-LINE SMALL OUTLINE, THIN PROFILE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
编程电压 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm 3.55 mm 5.08 mm 3.55 mm 3.55 mm 3.55 mm 3.55 mm 5.08 mm 1.2 mm 5.08 mm
部门规模 8K,4K,112K 8K,4K,112K 8K,4K,112K 8K,4K,112K 8K,4K,112K 8K,4K,112K 8K,4K,112K 8K,4K,112K 8K,4K,112K 8K,4K,112K
最大待机电流 0.000001 A 0.000001 A 0.000001 A 0.000001 A 0.000001 A 0.000001 A 0.000001 A 0.000001 A 0.000001 A 0.000001 A
最大压摆率 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO YES NO YES YES YES YES NO YES NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 THROUGH-HOLE J BEND THROUGH-HOLE J BEND J BEND J BEND J BEND THROUGH-HOLE GULL WING THROUGH-HOLE
端子节距 2.54 mm 1.27 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 2.54 mm 0.5 mm 2.54 mm
端子位置 DUAL QUAD DUAL QUAD QUAD QUAD QUAD DUAL DUAL DUAL
切换位 NO NO NO NO NO NO NO NO NO NO
类型 NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
宽度 15.24 mm 11.43 mm 15.24 mm 11.43 mm 11.43 mm 11.43 mm 11.43 mm 15.24 mm 8 mm 15.24 mm
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED 245 245 - 245 NOT SPECIFIED - -
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED 40 40 - 40 NOT SPECIFIED - -

 
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