d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
www.vishay.com
1
Si5997DU
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 4.1 A, V
GS
= 0 V
- 0.85
15
8
10.5
4.5
T
C
= 25 °C
-6
- 25
- 1.2
30
15
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 3.7
I
D
- 4.1 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 3.7
I
D
- 4.1 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
2
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 5.1 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 5.1 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
430
90
70
9.5
4.8
1.6
2.2
8
35
25
17
10
10
10
20
10
16
70
50
35
20
20
20
40
20
ns
14.5
7.5
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 3 A
V
GS
= - 4.5 V, I
D
= - 1 A
V
DS
= - 15 V, I
D
= - 3 A
- 20
0.045
0.072
7
0.054
0.088
- 1.2
- 30
- 22
4.1
- 2.4
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
Si5997DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
V
GS
= 10 V thru 6 V
V
GS
= 5 V
I
D
- Drain Current (A)
5
20
I
D
- Drain Current (A)
4
15
V
GS
= 4 V
3
10
2
T
C
= 25 °C
1
T
C
= 125 °C
0
T
C
= - 55 °C
0
1
2
3
4
5
V
GS
= 3 V
0
0.0
V
GS
= 2 V
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.14
V
GS
= 4.5 V
0.12
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
Transfer Characteristics
800
0.10
0.08
0.06
0.04
0.02
0.00
0
5
10
15
20
25
600
C
iss
400
V
GS
= 10 V
200
C
oss
C
rss
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 5.1 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.6
I
D
= 3 A
1.4
V
GS
= 10 V
8
V
DS
= 15 V
6
V
DS
= 7.5 V
V
DS
= 24 V
4
R
DS(on)
- On-Resistance
(Normalized)
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
2
4
6
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
www.vishay.com
3
Si5997DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.18
I
D
= 3 A
0.15
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
10
T
J
= 150 °C
0.12
0.09
T
J
= 125 °C
0.06
T
J
= 25 °C
1
T
J
= 25 °C
0.03
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.2
30
On-Resistance vs. Gate-to-Source Voltage
2.0
25
20
I
D
= 250 μA
1.6
Power (W)
V
GS(th)
(V)
1.8
15
10
1.4
5
1.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1
1 ms
10 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
100 ms
1s
10 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
Si5997DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
12
12
10
10
8
Package Limited
6
Power Dissipation (W)
I
D
- Drain Current (A)
8
6
4
4
2
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
T
C
- Case Temperature (°C)
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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