STT2PF60L
P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L
STripFET™ II Power MOSFET
General features
Type
STT2PF60L
■
V
DSS
60V
R
DS(on)
< 0.25Ω
I
D
2A
Standard outline for easy automated surface
mount assembly
Low threshlod drive
■
SOT23-6L
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
P
b
schematic diagram
O
Internal
ete
l
)-
(s
so
b
ct
Applications
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
Order codes
so
b
O
■
■
■
■
■
so
te
le
ro
P
uc
d
s)
t(
od
r
s)
t(
uc
DC motor drive
DC-DC converters
Battery management in nomadic equipment
Cellular
Power management in portable/desktop PCs
Sales Type
Marking
STP6
Package
Packaging
STT2PF60L
SOT23-6L
Tape & Reel
December 2005
DocRev3
1/11
www.st.com
11
Electrical ratings
STT2PF60L
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(1)
P
TOT
Absolute maximum ratings
Parameter
Drain-Source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20kΩ)
Gate-Source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
=100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Value
60
60
±15
2
1.3
8
1.6
Unit
V
V
V
A
1. Pulse width limited by safe operating area
Table 2.
Symbol
R
thJ-amb(1)
T
j
T
stg
Thermal data
Parameter
Thermal resistance junction-case Max
Maximum operating junction temperature
Storage temperature
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
1. Mounted on a 1 in
2
pad of 2 oz Cu in FR-4 board for t<10sec
b
O
so
te
le
r
P
Value
78
150
d
o
uc
s)
t(
A
A
W
Unit
Note:
For the P-Channel MOSFET actual polarity of voltage and current has to be
reversed
et
l
P
e
od
r
s)
t(
uc
°C/W
°C
°C
-55 to 150
2/11
DocRev3
STT2PF60L
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
On/off states
Parameter
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (V
GS
= 0)
Test Condictions
I
D
= 250μA, V
GS
= 0
V
DS
= Max Rating,
V
DS
= Max Rating,Tc=125°C
Min.
60
1
10
Typ.
Max.
Unit
V
µA
µA
nA
V
I
GSS
V
GS(th)
R
DS(on)
Gate Body Leakage Current
V
GS
= ±15V
(V
DS
= 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1A
V
GS
= 4.5V, I
D
= 1A
Table 4.
Symbol
g
fs (1)
C
iss
Dynamic
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
C
oss
C
rss
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS
=10V
(see Figure 14)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
DS
=10V, I
D
= 1A
b
O
Test Condictions
so
te
le
ro
P
Min.
1
uc
d
0.20
0.24
Typ.
3
313
67
25
5
0.5
2.2
±
100
s)
t(
et
l
P
e
od
r
ct
u
0.25
0.30
s)
(
Ω
Ω
Max.
Unit
S
pF
pF
pF
V
DS
=25V, f=1 MHz, V
GS
=0
V
DD
=30V, I
D
= 24A
7
nC
nC
nC
Note:
For the P-Channel MOSFET actual polarity of voltage and current has to be
reversed
DocRev3
3/11
Electrical characteristics
STT2PF60L
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on Delay Time
Rise Time
Test Condictions
V
DD
= 30V, I
D
=1A,
R
G
=4.7Ω, V
GS
=4.5V
(see Figure 13)
V
DD
= 30V, I
D
=1A,
R
G
=4.7Ω, V
GS
=4.5V
(see Figure 13)
Min.
Typ.
44
34
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
42
15
ns
ns
Table 6.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=2A, V
GS
=0
Test Condictions
Min.
V
SD(2)
t
rr
Q
rr
I
RRM
I
SD
=2A, di/dt = 100A/µs,
V
DD
=30 V, Tj=150°C
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
b
O
so
te
le
ro
P
uc
d
38
36.3
2.5
Typ.
Max.
2
8
s)
t(
1.2
Unit
A
A
V
P
e
od
r
s)
t(
uc
ns
nC
A
Note:
For the P-Channel MOSFET actual polarity of voltage and current has to be
reversed
4/11
DocRev3
STT2PF60L
Electrical characteristics
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Figure 5.
Transconductance
Figure 6.
b
O
so
te
le
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
Static drain-source on resistance
DocRev3
5/11
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
