IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= -10 V
44
7.1
27
Single
S
FEATURES
-200
0.50
•
•
•
•
•
•
•
•
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Available
Repetitive avalanche rated
P-channel
Fast switching
Available
Ease of paralleling
Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
G
G
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
2
PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application. The through-hole version (IRF9640L,
SiHF9640L) is available for low-profile applications.
G
D
S
D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF9640S-GE3
IRF9640SPbF
SiHF9640S-E3
D
2
PAK (TO-263)
-
IRF9640STRLPbF
a
SiHF9640STL-E3
a
D
2
PAK (TO-263)
-
IRF9640STRRPbF
a
SiHF9640STR-E3
a
I
2
PAK (TO-262)
SiHF9640L-GE3
IRF9640LPbF
SiHF9640L-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/d
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= -50 V, starting T
J
= 25 °C, L = 8.7 mH, R
g
= 25
,
I
AS
= -11 A (see fig. 12).
c. I
SD
-11 A, dI/dt
150 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0754-Rev. E, 02-May-16
Document Number: 91087
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
a
SYMBOL
V
DS
V
GS
V
GS
at -10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
LIMIT
-200
± 20
-11
-6.8
-44
1.0
0.025
700
-11
13
125
3.0
-5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Single Pulse Avalanche Energy
b
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
TYP.
-
-
-
MAX.
62
40
1.0
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p -n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
R
g
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
Reference to 25 °C, I
D
= -1 mA
V
DS
= V
GS
, I
D
= -250 μA
V
GS
= ± 20 V
V
DS
= -200 V, V
GS
= 0 V
V
DS
= -160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= -10 V
I
D
= 6.6 A
b
A
b
V
DS
= -50 V, I
D
= -6.6
MIN.
-200
-
-2.0
-
-
-
-
4.1
-
-
-
-
-
-
-
TYP.
-
-0.20
-
-
-
-
-
-
1200
370
81
-
-
-
14
43
39
38
4.5
7.5
-
MAX.
-
-
-4.0
± 100
-100
-500
0.50
-
-
-
-
44
7.1
27
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 5
I
D
= -11 A, V
DS
= -160 V,
see fig. 6 and 13
b
pF
V
GS
= -10 V
nC
V
DD
= -100 V, I
D
= -11 A,
R
g
= 9.1
,
R
D
= 8.6
,
see fig. 10
b
Between lead,
6 mm (0.25") from
package and center of
die contact
-
-
-
ns
D
-
G
nH
-
S
-
1.7
f = 1 MHz, open drain
0.3
-
-
-
-
-
-
-
-
250
2.9
-11
A
-44
-5.0
300
3.6
V
ns
μC
G
S
T
J
= 25 °C, I
S
= -11 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= -11 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S16-0754-Rev. E, 02-May-16
Document Number: 91087
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
Vishay Siliconix
- I
D
, Drain Current (A)
10
1
V
GS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
I
D
= - 11 A
V
GS
= - 10 V
- 4.5 V
20 µs Pulse Width
T
C
=
25 °C
10
1
10
0
10
0
91087_01
20 40
60 80 100 120 140 160
- V
DS
, Drain-to-Source Voltage (V)
91087_04
T
J,
Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
- I
D
, Drain Current (A)
Capacitance (pF)
10
1
V
GS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- 4.5 V
2400
2000
1600
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
1200
800
C
oss
400
C
rss
0
10
0
10
1
10
0
91087_02
20 µs Pulse Width
T
C
=
150 °C
10
0
10
1
- V
DS,
Drain-to-Source Voltage (V)
91087_05
- V
DS,
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
- V
GS
, Gate-to-Source Voltage (V)
I
D
= - 11 A
V
DS
= - 160 V
V
DS
= - 100 V
- I
D
, Drain Current (A)
16
V
DS
= - 40 V
10
1
25
°
C
150
°
C
12
8
10
0
20 µs Pulse Width
V
DS
= -
50 V
4
91087_03
4
For test circuit
see figure 13
0
0
91087_06
5
6
7
8
9
10
10
20
30
40
50
60
- V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. E, 02-May-16
Document Number: 91087
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
www.vishay.com
Vishay Siliconix
12
- I
SD
, Reverse Drain Current (A)
10
10
1
- I
D
, Drain Current (A)
8
6
4
2
150
°
C
10
0
25
°
C
10
-1
0.0
91087_07
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
91087_09
0
25
50
75
100
125
150
- V
SD
, Source-to-Drain Voltage (V)
T
C
, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
10
2
5
Operation in this area limited
by R
DS(on)
V
DS
10
µs
R
g
V
GS
- I
D
, Drain Current (A)
D.U.T.
+
-
V
DD
2
100
µs
10
5
- 10 V
1
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
2
5
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
2
10
ms
10
2
2
5
t
d(on)
V
GS
10
3
10 %
t
r
t
d(off)
t
f
1
10
2
5
91087_08
- V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
90 %
V
DS
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
P
DM
0.20
0.1
0.10
0.05
0.02
0.01
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
Single Pulse
(Thermal Response)
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
1
10
91087_11
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. E, 02-May-16
Document Number: 91087
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
www.vishay.com
Vishay Siliconix
L
Vary t
p
to obtain
required I
AS
R
g
V
DS
I
AS
D.U.T
I
AS
V
DS
-
+ V
DD
V
DD
t
p
- 10 V
t
p
0.01
Ω
V
DS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
1600
E
AS
, Single Pulse Energy (mJ)
1200
I
D
- 4.9 A
- 7.0 A
Bottom - 11 A
Top
800
400
0
V
DD
= - 50 V
25
50
75
100
125
150
91087_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12 V
- 10 V
Q
GS
Q
G
0.2 µF
0.3 µF
V
G
V
GS
- 3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
S16-0754-Rev. E, 02-May-16
Document Number: 91087
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
+
D.U.T.
-
Q
GD
V
DS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
