VS-GB50NA120UX
www.vishay.com
Vishay Semiconductors
“High Side Chopper” IGBT SOT-227
(Ultrafast IGBT), 50 A
FEATURES
• NPT Gen 5 IGBT technology
• Square RBSOA
• HEXFRED
®
clamping diode
• Positive V
CE(on)
temperature coefficient
• Fully isolated package
SOT-227
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
typical at 50 A, 25 °C
Speed
Package
Circuit
1200 V
50 A at 92 °C
3.22 V
8 kHz to 30 kHz
SOT-227
High side switch
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
V
GE
P
D
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
1200
84
57
150
A
150
76
52
± 20
431
242
W
278
156
2500
V
V
UNITS
V
Power dissipation, diode
RMS isolation voltage
P
D
V
ISOL
Revision: 11-Jun-15
Document Number: 93101
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB50NA120UX
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
SYMBOL
V
BR(CES)
TEST CONDITIONS
V
GE
= 0 V, I
C
= 1 mA
V
GE
= 15 V, I
C
= 25 A
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 25 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
Collector to emitter leakage current
Diode reverse breakdown voltage
V
GE(th)
V
GE(th)
/T
J
I
CES
V
BR
V
CE
= V
GE
, I
C
= 500 μA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
I
R
= 1 mA
I
C
= 25 A, V
GE
= 0 V
Diode forward voltage drop
V
FM
I
C
= 50 A, V
GE
= 0 V
I
C
= 25 A, V
GE
= 0 V, T
J
= 125 °C
I
C
= 50 A, V
GE
= 0 V, T
J
= 125 °C
Diode reverse leakage current
Gate to emitter leakage current
I
RM
I
GES
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
GE
= ± 20 V
MIN.
1200
-
-
-
-
4
-
-
-
1200
-
-
-
-
-
-
-
TYP.
-
2.46
3.22
2.84
3.78
5
-10
6
0.7
-
1.99
2.53
1.96
2.66
4
0.6
-
MAX.
-
-
2.80
3.60
3.0
4
-
50
2.0
-
2.42
3.00
2.30
3.08
50
3
± 200
μA
mA
nA
V
mV/°C
μA
mA
V
V
UNITS
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
RBSOA
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
T
J
= 150 °C, I
C
= 150 A, R
g
= 22
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V
-
-
-
-
-
-
I
C
= 50 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 125 °C
I
C
= 50 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
43
187
2.72
1.11
3.83
3.94
2.31
6.25
191
53
223
143
Fullsquare
129
11
700
208
17
1768
161
14
1046
257
21
2698
ns
A
nC
ns
A
nC
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
nC
UNITS
Revision: 11-Jun-15
Document Number: 93101
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB50NA120UX
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
Mounting torque
Case style
SOT-227
IGBT
Diode
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Flat, greased surface
MIN.
-40
-
-
-
-
-
TYP.
-
-
-
0.05
30
-
MAX.
150
0.29
0.45
-
-
1.3
g
Nm
°C/W
UNITS
°C
Allowable Case Temperature (°C)
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
200
175
150
125
T
J
= 25 °C
I
C
(A)
100
75
50
25
0
0
1
2
3
4
5
6
7
8
T
J
= 125 °C
I
C
- Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
V
CE
(V)
Fig. 3 - Typical IGBT Collector Current Characteristics
10
100
1
T
J
= 125 °C
10
I
CES
(mA)
0.1
I
C
(A)
1
0.01
0.1
0.001
T
J
= 25 °C
0.01
1
10
100
1000
10 000
0.0001
100
300
500
700
900
1100
V
CE
(V)
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
V
CES
(V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Revision: 11-Jun-15
Document Number: 93101
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB50NA120UX
www.vishay.com
5.5
T
J
= 25 °C
5.0
150
125
T
J
= 25 °C
T
J
= 125 °C
200
175
Vishay Semiconductors
V
geth
(V)
4.5
I
F
(A)
T
J
= 125 °C
100
75
50
25
4.0
3.5
3.0
0.0002
0
0.0004
0.0006
0.0008
0.001
0
1
2
3
4
5
6
I
C
(mA)
Fig. 5 - Typical IGBT Threshold Voltage
V
FM
(V)
Fig. 8 - Typical Diode Forward Characteristics
6
4
5
100 A
3
Energy (mJ)
E
on
V
CE
(V)
4
50 A
2
E
off
1
3
25 A
2
10
30
50
70
90
110
130
150
0
10
20
30
40
50
T
J
(°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
160
140
1000
I
C
(A)
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5
,
V
GE
= 15 V
Allowable Case Temperature (°C)
Switching Time (ns)
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
t
d(off)
t
d(on)
100
t
f
t
r
10
0
10
20
30
40
50
60
I
F
- Continuous Forward Current (A)
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
I
C
(A)
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5
,
V
GE
= 15 V
Revision: 11-Jun-15
Document Number: 93101
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB50NA120UX
www.vishay.com
12
10
E
on
210
190
8
250
230
Vishay Semiconductors
Energy (mJ)
t
rr
(ns)
170
150
130
110
6
4
2
0
0
10
20
30
40
50
E
off
T
J
= 125 °C
T
J
= 25 °C
90
70
100
1000
R
g
(Ω)
Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 50 A, L = 500 μH,
V
CC
= 600 V, V
GE
= 15 V
1000
40
35
dI
F
/dt (A/µs)
Fig. 13 - Typical t
rr
Diode vs. dI
F
/dt
V
R
= 200 V, I
F
= 50 A
Switching Time (ns)
t
d(off)
t
d(on)
100
30
25
T
J
= 125 °C
I
rr
(A)
t
f
20
15
T
J
= 25 °C
t
r
10
5
10
0
10
20
30
40
50
0
100
1000
R
g
(Ω)
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
I
C
= 50 A, V
GE
= 15 V
2650
2400
2150
1900
T
J
= 125 °C
dI
F
/dt (A/µs)
Fig. 14 - Typical I
rr
Diode vs. dI
F
/dt
V
R
= 200 V, I
F
= 50 A
Q
rr
(nC)
1650
1400
1150
900
650
400
100
1000
T
J
= 25 °C
dI
F
/dt (A/µs)
Fig. 15 - Typical Q
rr
Diode vs. dI
F
/dt, V
R
= 200 V, I
F
= 50 A
Revision: 11-Jun-15
Document Number: 93101
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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