Freescale Semiconductor
Technical Data
Document Number: MRF8S21200H
Rev. 2, 10/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 48 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
17.8
18.1
18.1
η
D
(%)
32.6
32.6
32.9
Output PAR
(dB)
6.4
6.3
6.2
ACPR
(dBc)
--37.7
--37.1
--36.2
MRF8S21200HR6
MRF8S21200HSR6
2110-
-2170 MHz, 48 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 250 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
A
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
200
1.6
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
CASE 375D-
-05, STYLE 1
NI-
-1230
MRF8S21200HR6
CASE 375E-
-04, STYLE 1
NI-
-1230S
MRF8S21200HSR6
RF
in
/V
GS
3
1 RF
out
/V
DS
RF
in
/V
GS
4
2 RF
out
/V
DS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76°C, 48 W CW, 28 Vdc, I
DQ
= 1400 mA
Case Temperature 81°C, 200 W CW, 28 Vdc, I
DQ
= 1400 mA
Symbol
R
θJC
Value
(2,3)
0.31
0.27
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MRF8S21200HR6 MRF8S21200HSR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1400 mA, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2.0
0.1
2.0
2.7
0.17
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 48 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16.5
30.0
5.7
—
—
18.1
32.6
6.3
--37.1
--15
19.5
—
—
--35.0
--7
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 48 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
1. Part internally matched both on input and output.
(continued)
G
ps
(dB)
17.8
18.1
18.1
η
D
(%)
32.6
32.6
32.9
Output PAR
(dB)
6.4
6.3
6.2
ACPR
(dBc)
--37.7
--37.1
--36.2
IRL
(dB)
--15
--15
--13
MRF8S21200HR6 MRF8S21200HSR6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
IMD Symmetry @ 140 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 48 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
IMD
sym
Min
Typ
Max
Unit
MHz
—
8
—
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 2110--2170 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
35
0.4
0.02
0.02
—
—
—
—
MHz
dB
dB/°C
dB/°C
MRF8S21200HR6 MRF8S21200HSR6
RF Device Data
Freescale Semiconductor
3
C12
C6
C4
C14
C15
R4
R2
C18
R1
C1*
C2
C3
R3
C8
C9
C10
C11*
R5
C13 C16
C7
MRF8S21200H
Rev. 2
C5
C17
*C1 and C11 are mounted vertically.
Figure 2. MRF8S21200HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8S21200HR6(HSR6) Test Circuit Component Designations and Values
Part
C1, C4, C5, C11, C12, C13
C2
C3
C6, C7, C14, C15, C16, C17
C8
C9
C10
C18
R1
R2, R3
R4, R5
PCB
Description
8.2 pF Chip Capacitors
0.2 pF Chip Capacitor
0.6 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
0.5 pF Chip Capacitor
0.8 pF Chip Capacitor
0.3 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
22
Ω,
1/4 W Chip Resistor
12
Ω,
1/4 W Chip Resistors
0
Ω,
3 A Chip Resistors
0.030″,
ε
r
= 3.5
Part Number
ATC100B8R2CT500XT
ATC100B0R2BT500XT
ATC100B0R6BT500XT
C5750X5R1H106MT
ATC100B0R5BT500XT
ATC100B0R8BT500XT
ATC100B0R3BT500XT
MCGPR63V477M13X26--RH
CRCW120622R0FKEA
CRCW120612R0FKEA
CRCW12060000Z0EA
RO4350B
Manufacturer
ATC
ATC
ATC
TDK
ATC
ATC
ATC
Multicomp
Vishay
Vishay
Vishay
Rogers
MRF8S21200HR6 MRF8S21200HSR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 48 W (Avg.), I
DQ
= 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
η
D
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
G
ps
IRL
PARC
ACPR
2080
2100
2120
2140
2160
2180
2200
η
D
, DRAIN
EFFICIENCY (%)
19
18.8
18.6
G
ps
, POWER GAIN (dB)
18.4
18.2
18
17.8
17.6
17.4
17.2
17
2060
34
33
32
31
30
--34
ACPR (dBc)
--34.8
--35.6
--36.4
--37.2
--38
2220
--8
--9.8
--11.6
--13.4
--15.2
--17
IRL, INPUT RETURN LOSS (dB)
0
--1
--1.5
--2
--2.5
PARC (dB)
--0.5
f, FREQUENCY (MHz)
Figure 3. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 48 Watts Avg.
--10
--20
--30
--40
--50
--60
IM5--U
IM5--L
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
V
DD
= 28 Vdc, P
out
= 140 W (PEP), I
DQ
= 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
IM3--L
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18.5
G
ps
, POWER GAIN (dB)
18
17.5
17
16.5
16
1
48
η
D
ACPR
η
D
,
DRAIN EFFICIENCY (%)
43
38
33
28
23
PARC
100
18
120
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 1400 mA, f = 2140 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input
0
Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
--1
--2
--3
--4
--5
--1 dB = 42 W
--2 dB = 57 W
--3 dB = 76 W
20
40
60
80
G
ps
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S21200HR6 MRF8S21200HSR6
RF Device Data
Freescale Semiconductor
5
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