Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRFN8405
HEXFET
®
POWER MOSFET
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
I
D (Package Limited)
40V
1.6m
2.0m
187A
95A
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
Base Part Number
AUIRFN8405
Package Type
PQFN 5mm x 6mm
PQFN 5X6 mm
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRFN8405TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
187
132
95
670
3.3
136
0.022
± 20
-55 to + 175
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS(Thermally Limited)
E
AS
(Tested)
I
AR
E
AR
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
190
365
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
HEXFET® is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
09/24/2018
AUIRFN8405
Parameter
Typ.
–––
–––
–––
–––
Max.
1.1
30
44
28
Units
°C/W
Thermal Resistance
Symbol
Junction-to-Case
R
JC
(Bottom)
Junction-to-Case
R
JC
(Top)
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
(<10s)
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
37
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
–––
1.6
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
2.2
–––
–––
–––
Drain-to-Source Leakage Current
I
DSS
–––
–––
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1.0mA
2.0
m V
GS
= 10V, I
D
= 50A
3.9
V V
DS
= V
GS
, I
D
= 100µA
1.0
V
DS
= 40V, V
GS
= 0V
µA V = 40V, V = 0V, T = 125°C
150
DS
GS
J
Gate-to-Source Forward Leakage
–––
–––
100
V
GS
= 20V
I
GSS
nA
Gate-to-Source Reverse Leakage
–––
––– -100
V
GS
= -20V
R
G
Internal Gate Resistance
–––
2.4
–––
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
145
–––
–––
S V
DS
= 10V, I
D
= 50A
Q
g
Total Gate Charge
–––
78
117
I
D
= 50A
V
DS
= 20V
Q
gs
Gate-to-Source Charge
–––
21
–––
nC
V
GS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge
–––
25
–––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
53
–––
t
d(on)
Turn-On Delay Time
–––
9.5
–––
V
DD
= 20V
I
D
= 50A
t
r
Rise Time
–––
30
–––
ns
t
d(off)
Turn-Off Delay Time
–––
58
–––
R
G
= 2.7
V
GS
= 10V
Fall Time
–––
33
–––
t
f
C
iss
Input Capacitance
––– 5142 –––
V
GS
= 0V
V
DS
= 25V
C
oss
Output Capacitance
–––
758
–––
C
rss
Reverse Transfer Capacitance
–––
501
–––
pF ƒ = 1.0 MHz
C
oss
eff. (ER) Effective Output Capacitance (Energy Related)
–––
900
–––
V
GS
= 0V, V
DS
= 0V to 32V
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
––– 1094 –––
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
–––
––– 187
MOSFET symbol
I
S
A
(Body Diode)
showing the
integral reverse
Pulsed Source Current
–––
––– 670
I
SM
A
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
0.9
1.3
V T
J
= 25°C, I
S
= 50A, V
GS
= 0V
dv/dt
Peak Diode Recovery
–––
5.2
––– V/ns T
J
= 175°C, I
S
= 50A, V
DS
= 40V
–––
27
–––
T
J
= 25°C
V
R
= 34V,
t
rr
Reverse Recovery Time
ns
–––
28
–––
T
J
= 125°C
I
F
= 50A
–––
16
–––
T
J
= 25°C
di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
nC
–––
18
–––
T
J
= 125°C
I
RRM
Reverse Recovery Current
––– 0.92 –––
A T
J
= 25°C
2
09/24/2018
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.25V
5.0V
4.5V
AUIRFN8405
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.25V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
4.5V
10
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig. 2
Typical Output Characteristics
2.0
ID = 50A
1.6
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 175°C
TJ = 25°C
1.2
10
0.8
VDS = 10V
1
2
3
4
5
6
60µs
PULSE WIDTH
7
8
9
0.4
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 50A
VDS = 32V
VDS = 20V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
09/24/2018
1000
ID, Drain-to-Source Current (A)
AUIRFN8405
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
ISD, Reverse Drain Current (A)
100
TJ = 175°C
100µsec
100
10
TJ = 25°C
10
Limited by Package
1msec
1
VGS = 0V
0.1
0.1
0.4
0.7
1.0
1.3
1.6
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
0.1
0.1
1
10
VDS , Drain-to-Source Voltage (V)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
200
175
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
50
Limited By Package
Id = 1.0mA
48
46
44
42
40
38
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
150
125
100
75
50
25
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
m
RDS (on), Drain-to -Source On Resistance (
)
Fig 10.
Drain-to-Source Breakdown Voltage
20
VGS = 5.0V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0.70
0.60
0.50
Energy (µJ)
15
0.40
0.30
0.20
0.10
0.00
-5
0
5
10 15 20 25 30 35 40 45
10
5
0
0
20
40
60
80 100 120 140 160 180
ID, Drain Current (A)
VDS, Drain-to-Source Voltage (V)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Typical On-Resistance vs. Drain Current
09/24/2018
10
Thermal Response ( Z thJC ) °C/W
AUIRFN8405
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.01
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulse Width
200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 50A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
EAR , Avalanche Energy (mJ)
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
09/24/2018
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