STGW40H60DLFB,
STGWT40H60DLFB
Trench gate field-stop IGBT, HB series
600 V, 40 A high speed
Datasheet
-
production data
Features
TAB
•
Maximum junction temperature: T
J
= 175 °C
•
High speed switching series
•
Minimized tail current
•
Low saturation voltage: V
CE(sat)
= 1.6 V (typ.)
@ I
C
= 40 A
3
2
1
2
1
3
•
Tight parameters distribution
•
Safe paralleling
•
Low thermal resistance
•
Low V
F
soft recovery co-packaged diode
•
Lead free package
TO-247
TO-3P
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
•
Induction heating
•
Microwave oven
•
Resonant converters
G (1)
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V
CE(sat)
temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Table 1. Device summary
E (3)
Order code
STGW40H60DLFB
STGWT40H60DLFB
Marking
GW40H60DLFB
GWT40H60DLFB
Package
TO-247
TO-3P
Packaging
Tube
Tube
March 2014
This is information on a product in full production.
DocID024370 Rev 4
1/17
www.st.com
17
Contents
STGW40H60DLFB, STGWT40H60DLFB
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
4.2
TO-247, STGW40H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
TO-3P, STGWT40H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
DocID024370 Rev 4
STGW40H60DLFB, STGWT40H60DLFB
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
CES
I
C
I
C
I
CP(1)
V
GE
I
F
I
F
I
FP(1)
P
TOT
T
STG
T
J
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature
Value
600
80
40
160
±20
80
40
160
283
- 55 to 150
- 55 to 175
Unit
V
A
A
A
V
A
A
A
W
°C
°C
1. Pulse width limited by maximum junction temperature
Table 3. Thermal data
Symbol
R
thJC
R
thJC
R
thJA
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.53
1.47
50
Unit
°C/W
°C/W
°C/W
DocID024370 Rev 4
3/17
Electrical characteristics
STGW40H60DLFB, STGWT40H60DLFB
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
I
C
= 2 mA
V
GE
= 15 V, I
C
= 40 A
V
CE(sat)
V
GE
= 15 V, I
C
= 40 A
Collector-emitter saturation
T
J
= 125 °C
voltage
V
GE
= 15 V, I
C
= 40 A
T
J
= 175 °C
I
F
= 40 A
V
F
Forward on-voltage
I
F
= 40 A T
J
= 125 °C
I
F
= 40 A T
J
= 175 °C
V
GE(th)
I
CES
I
GES
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
V
CE
= V
GE
, I
C
= 1 mA
V
CE
= 600 V
V
GE
= ± 20 V
5
Min.
600
1.6
1.7
1.8
1.55
1.3
1.25
6
7
25
250
V
µA
nA
1.8
V
2
V
Typ.
Max.
Unit
V
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
Table 5. Dynamic characteristics
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CC
= 480 V, I
C
= 40 A,
V
GE
= 15 V, see
Figure 27
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
Test conditions
Min.
-
-
-
-
-
-
Typ.
5412
198
107
210
39
82
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
4/17
DocID024370 Rev 4
STGW40H60DLFB, STGWT40H60DLFB
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
t
d(off)
t
f
E
off(1)
t
d(off)
t
f
E
off(1)
Parameter
Turn-off delay time
Current fall time
Turn-off switching losses
Turn-off delay time
Current fall time
Turn-off switching losses
Test conditions
V
CE
= 400 V, I
C
= 40 A,
R
G
= 10
Ω,
V
GE
= 15 V, see
Figure 25
V
CE
= 400 V, I
C
= 40 A,
R
G
= 10
Ω,
V
GE
= 15 V,
T
J
= 175 °C, see
Figure 25
Min.
Typ.
142
-
-
27.6
363
141
-
-
61
764
-
-
-
-
Max.
Unit
ns
ns
µJ
ns
ns
µJ
1. Turn-off losses include also the tail of the collector current.
Table 7. IGBT switching characteristics (capacitive load)
Symbol
Parameter
Test conditions
V
CC
= 320 V, R
G
= 10
Ω,
I
C
= 40 A, L = 100 µH,
C
snub
= 20 nF, see
Figure 26
E
off(1)
Turn-off switching losses
V
CC
= 320 V, R
G
= 10
Ω,
I
C
= 40 A, L = 100 µH,
C
snub
= 20 nF, T
J
= 175 °C,
see
Figure 26
Min.
-
Typ.
190
Max.
-
µJ
-
290
-
Unit
1. Turn-off losses include also the tail of the collector current.
DocID024370 Rev 4
5/17
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