without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00F
07/12/06
1
IS93C46D
PIN CONFIGURATIONS
8-Pin DIP, 8-Pin TSSOP
8-Pin JEDEC SOIC “GR”
8-pad DFN
ISSI
®
CS 1
CS
SK
D
IN
D
OUT
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
CS
SK
D
IN
D
OUT
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
8 VCC
7 NC
6 ORG
5 GND
SK 2
D
IN
3
D
OUT
4
(Top View)
PIN DESCRIPTIONS
CS
SK
D
IN
D
OUT
ORG
NC
Vcc
GND
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Organization Select
Not Connected
Power
Ground
instruction begins with a start bit of the logical “1” or
HIGH. Following this are the opcode (2 bits),
address field (6 or 7 bits), and data, if appropriate. The
clock signal may be held stable at any moment to
suspend the device at its last state, allowing clock-
speed flexibility. Upon completion of bus
communication, CS would be pulled LOW. The device
then would enter Standby mode if no internal
programming is underway.
Read (READ)
The READ instruction is the only instruction that outputs
serial data on the D
OUT
pin. After the read instruction and
address have been decoded, data is transferred from the
selected memory register into a serial shift register. (Please
note that one logical “0” bit precedes the actual 8 or 16-bit
output data string.) The output on D
OUT
changes during the
low-to-high transitions of SK (see Figure 3).
Applications
The IS93C46D is very popular in many applications
which require low-power, low-density storage.
Applications using this device include industrial
controls, networking, and numerous other consumer
electronics.
Low Voltage Read
The IS93C46D has been designed to ensure that data read
operations are reliable in low voltage environments. They
provide accurate operation with Vcc as low as 1.8V.
Endurance and Data Retention
The IS93C46D is designed for applications requiring up to
1M programming cycles (WRITE, WRALL, ERASE and
ERAL). It provides 40 years of secure data retention without
power after the execution of 1M programming cycles.
Auto Increment Read Operations
In the interest of memory transfer operation applications,
the IS93C46D has been designed to output a continuous
stream of memory content in response to a single read
operation instruction. To utilize this function, the system
asserts a read instruction specifying a start location ad-
dress. Once the 8 or 16 bits of the addressed register have
been clocked out, the data in consecutively higher address
locations is output. The address will wrap around continu-
ously with CS HIGH until the chip select (CS) control pin is
brought LOW. This allows for single instruction data dumps
to be executed with a minimum of firmware overhead.
Device Operations
The IS93C46D is controlled by a set of instructions
which are clocked-in serially on the Din pin. Before
each low-to-high transition of the clock (SK), the CS pin
must have already been raised to HIGH, and the Din
value must be stable at either LOW or HIGH. Each
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00F
07/16/06
IS93C46D
ISSI
Write All (WRALL)
®
Write Enable (WEN)
The write enable (WEN) instruction must be executed
before any device programming (WRITE, WRALL, ERASE,
and ERAL) can be done. When Vcc is applied, this device
powers up in the write disabled state. The device then
remains in a write disabled state until a WEN instruction is
executed. Thereafter, the device remains enabled until a
WDS instruction is executed or until Vcc is removed. (See
Figure 4.) (Note: Chip select must remain LOW until Vcc
reaches its operational value.)
The write all (WRALL) instruction programs all registers with
the data pattern specified in the instruction. As with the
WRITE instruction, the falling edge of CS must occur to
initiate the self-timed programming cycle. If CS is then
brought HIGH after a minimum wait of 200 ns (t
CS
), the D
OUT
pin indicates the READY/BUSY status of the chip (see
Figure 6). Vcc is required to be above 4.5V for WRALL to
function properly.
Write Disable (WDS)
The write disable (WDS) instruction disables all programming
capabilities. This protects the entire device against acci-
dental modification of data until a WEN instruction is
executed. (When Vcc is applied, this part powers up in the
write disabled state.) To protect data, a WDS instruction
should be executed upon completion of each programming
operation.
Write (WRITE)
The WRITE instruction includes 8 or 16 bits of data to be
written into the specified register. After the last data bit has
been applied to D
IN
, and before the next rising edge of SK,
CS must be brought LOW. If the device is write-enabled,
then the falling edge of CS initiates the self-timed program-
ming cycle (see WEN).
If CS is brought HIGH, after a minimum wait of 200 ns (5V
operation) after the falling edge of CS (t
CS
) D
OUT
will indicate
the READY/BUSY status of the chip. Logical “0” means
programming is still in progress; logical “1” means the
selected register has been written, and the part is ready for
another instruction (see Figure 5). The READY/BUSY
status will not be available if: a) The CS input goes HIGH
after the end of the self-timed programming cycle, t
WP
; or b)
Simultaneously CS is HIGH, Din is HIGH, and SK goes
HIGH, which clears the status flag.
Erase Register (ERASE)
After the erase instruction is entered, CS must be brought
LOW. The falling edge of CS initiates the self-timed internal
programming cycle. Bringing CS HIGH after a minimum of
t
CS
, will cause D
OUT
to indicate the READ/BUSY status of the
chip: a logical “0” indicates programming is still in progress;
a logical “1” indicates the erase cycle is complete and the
part is ready for another instruction (see Figure 8).
Erase All (ERAL)
Full chip erase is provided for ease of programming. Erasing
the entire chip involves setting all bits in the entire memory
array to a logical “1” (see Figure 9). Vcc is required to be
above 4.5V for ERAL to function properly.
INSTRUCTION SET - IS93C46D (1Kb)
8-bit Organization
(ORG = GND)
Address
(1)
Input Data
(A
6
-A
0
)
11xxxxx
(A
6
-A
0
)
01xxxxx
00xxxxx
(A
6
-A
0
)
10xxxxx
—
—
(D
7
-D
0
)
(D
7
-D
0
)
—
—
—
16-bit Organization
(ORG = Vcc)
Address
(1)
Input Data
(A
5
-A
0
)
11xxxx
(A
5
-A
0
)
01xxxx
00xxxx
(A
5
-A
0
)
10xxxx
—
—
(D
15
-D
0
)
(D
15
-D
0
)
—
—
—
Instruction
(2)
READ
WEN
(Write Enable)
WRITE
Start Bit
1
1
1
1
1
1
1
OP Code
10
00
01
00
00
11
00
WRALL
(Write All Registers)
WDS
(Write Disable)
ERASE
ERAL (
Erase All Registers)
Notes:
1. x = Don't care bit.
2. If the number of bits clocked-in does not match the number corresponding to a selected command, all extra trailing bits are ignored,
and WRITE, WRALL, ERASE, ERAL are also ignored, and READ, WEN, WDS are accepted.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00F
07/16/06
3
IS93C46D
ISSI
Value
–0.5 to +6.5
–0.5 to Vcc + 0.5
–55 to +125
–65 to +150
5
Unit
V
V
°C
°C
mA
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
S
V
P
T
BIAS
T
STG
I
OUT
Parameter
Supply Voltage
Voltage on Any Pin
Temperature Under Bias
Storage Temperature
Output Current
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING RANGE
Range
Industrial
Automotive
Ambient Temperature
–40°C to +85°C
–40°C to +125°C
V
CC
1.8V to 5.5V
2.5V to 5.5V
Note:
ISSI offers Industrial grade for Commercial applications (0
o
C to +70
o
C)
CAPACITANCE
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
5
5
Unit
pF
pF
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00F
07/16/06
IS93C46D
ISSI
Test Conditions
I
OL
= 100 µA
I
OL
= 2.1mA
I
OH
= –100 µA
I
OH
= –400 µA
Vcc
1.8V to 2.7V
2.7V to 5.5V
1.8V to 2.7V
2.7V to 5.5V
1.8V to 2.7V
2.7V to 5.5V
1.8V to 2.7V
2.7V to 5.5V
V
IN
= 0V to V
CC
(CS, SK,D
IN
,ORG)
V
OUT
= 0V to V
CC
, CS = 0V
Min.
—
—
V
CC
– 0.2
2.4
0.7
X
V
CC
2.0
–0.3
–0.3
0
0
Max.
0.2
0.4
—
—
V
CC
+1
V
CC
+1
0.2
X
V
CC
0.8
2.5
2.5
®
DC ELECTRICAL CHARACTERISTICS
T
A
= –40°C to +85°C for Industrial and –40°C to +125°C for Automotive.
Symbol
V
OL2
V
OL1
V
OH2
V
OH1
V
IH
V
IL
I
LI
I
LO
Notes:
Automotive grade devices in this table are tested with Vcc = 2.5V to 5.5V and 4.5V to 5.5V. An operation with Vcc <2.5V is not specified.
Parameter
Output LOW Voltage
Output LOW Voltage
Output HIGH Voltage
Output HIGH Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Unit
V
V
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS
T
A
= –40°C to +85°C for Industrial, –40°C to +125°C for Automotive.
Symbol
I
CC
1
Parameter
Vcc Read Supply Current
Test Conditions
CS = V
IH
, SK = 1 MHz, CMOS input levels
CS = V
IH
, SK = 2 MHz, CMOS input levels
CS = V
IH
, SK = 2 MHz, CMOS input levels
CS = V
IH
, SK = 1 MHz, CMOS input levels
CS = V
IH
, SK = 2 MHz, CMOS input levels
CS = V
IH
, SK = 2 MHz, CMOS input levels
CS = GND, SK = GND
ORG = Vcc or Floating (x16)
D
IN
= Vcc or GND
CS = GND, SK = GND
ORG = GND (x8)
D
IN
= Vcc or GND
Vcc
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
0.1
0.2
0.5
0.5
1
2
0.1
0.1
0.2
6
6
10
1
1
2
1
2
3
1
2
4
10
10
15
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
I
CC
2
Vcc Write Supply Current
I
SB
1
Standby Current
I
SB
2
Standby Current
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