Si6466DQ
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
FEATURES
I
D
(A)
7.8
6.3
r
DS(on)
(W)
0.014 @ V
GS
= 4.5 V
0.021 @ V
GS
= 2.5 V
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
D
TSSOP-8
D
S
S
G
1
2
3
4
Top View
Ordering Information: Si6466DQ-T1
S*
N-Channel MOSFET
D
8 D
7 S
6 S
5 D
* Source Pins 2, 3, 6 and 7
must be tied common.
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
20
"12
7.8
6.2
30
1.50
1.5
1.0
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70719
S-31725—Rev. B, 18-Aug-03
www.vishay.com
Symbol
R
thJA
Limit
83
Unit
_C/W
1
Si6466DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 4.5 V, I
D
= 7.8 A
V
GS
= 2.5 V, I
D
= 6.3 A
V
DS
= 10 V, I
D
= 7.8 A
I
S
= 1.50 A, V
GS
= 0 V
20
0.0105
0.0135
45
0.7
1.1
0.014
0.021
W
S
V
0.6
"100
1
25
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.50 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
0.2
19
30
130
40
50
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 7.8 A
34
6.7
8.1
1.9
40
60
250
80
80
ns
W
60
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70719
S-31725—Rev. B, 18-Aug-03
Si6466DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
Output Characteristics
V
GS
= 5 thru 2.5 V
30
Transfer Characteristics
24
I D - Drain Current (A)
2V
I D - Drain Current (A)
24
18
18
12
12
T
C
= 125_C
6
25_C
- 55_C
1.5
2.0
2.5
6
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
V
GS
- Gate-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
6000
5000
Capacitance
r DS(on)- On-Resistance (
W
)
0.016
V
GS
= 2.5 V
C - Capacitance (pF)
4000
3000
2000
C
oss
1000
0
0
6
12
18
24
30
0
4
8
C
rss
V
GS
= 4.5 V
C
iss
0.012
0.008
0.004
0.000
I
D
- Drain Current (A)
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
DS
= 10 V
I
D
= 7.8 A
V GS - Gate-to-Source Voltage (V)
r DS(on)- On-Resistance (
W
)
(Normalized)
4
1.4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 7.8 A
3
1.2
2
1.0
1
0.8
0
0
8
16
24
32
40
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Document Number: 70719
S-31725—Rev. B, 18-Aug-03
www.vishay.com
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Si6466DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
20
rDS(on) - On-Resistance (
W)
I S - Source Current (A)
T
J
= 150_C
10
0.06
0.05
0.04
0.03
I
D
= 7.8 A
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
T
J
= 25_C
1
0.0
0.4
Threshold Voltage
60
50
40
Power (W)
30
20
Single Pulse Power
0.2
Variance (V)
I
D
= 250
mA
- 0.0
VGS(th)
- 0.2
- 0.4
10
0
0.01
- 0.6
- 50
- 25
0
25
50
75
100
125
150
0.10
1.00
Time (sec)
10.00
T
J
- Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
P
DM
t
1
t
2
1. Duty Cycle, D =
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
2. Per Unit Base = R
thJA
= 83
_
C/W
t
1
t
2
0.01
10
-4
10
-3
10
-2
10
-1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70719
S-31725—Rev. B, 18-Aug-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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