PD - 96891A
AUTOMOTIVE MOSFET
IRF2804S-7P
Features
l
l
l
l
l
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 40V
G
S
R
DS(on)
= 1.6mΩ
I
D
= 160A
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
S (Pin 2, 3 ,5,6,7)
G (Pin 1)
D
D
S
S
S
Absolute Maximum Ratings
G
S
S
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
320
230
160
1360
330
2.2
± 20
630
1050
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/°C
V
mJ
A
mJ
°C
c
h
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
j
Parameter
Typ.
–––
0.50
Max.
0.50
–––
62
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
Junction-to-Ambient (PCB Mount, steady state)
ij
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
6/01/05
IRF2804S-7P
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
SMD
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
40
–––
–––
2.0
220
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.028
1.2
–––
–––
–––
–––
–––
–––
170
63
71
17
150
110
105
4.5
7.5
6930
1750
970
5740
1570
2340
–––
–––
1.6
4.0
–––
20
250
200
-200
260
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
nA
V
mΩ
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 160A
V
DS
= 10V, I
D
= 160A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 160A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 160A
R
G
= 2.6Ω
V
GS
= 10V
V/°C Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250µA
e
e
d
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
43
48
320
A
1360
1.3
65
72
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 160A, V
GS
= 0V
T
J
= 25°C, I
F
= 160A, V
DD
= 20V
di/dt = 100A/µs
e
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.049mH, R
G
= 25Ω, I
AS
= 160A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at
T
J
of approximately 90°C.
2
www.irf.com
IRF2804S-7P
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
1000
BOTTOM
100
100
4.5V
≤
60µs PULSE WIDTH
Tj = 175°C
4.5V
10
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
240
Gfs, Forward Transconductance (S)
TJ = 25°C
200
160
120
80
40
0
0
20
40
60
80
100
120
140
ID, Drain-to-Source Current (A)
TJ = 175°C
ID, Drain-to-Source Current
(Α)
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
VDS = 15V
≤
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VDS = 10V
380µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
www.irf.com
3
IRF2804S-7P
14000
12000
10000
8000
6000
4000
2000
0
1
10
100
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 160A
VGS, Gate-to-Source Voltage (V)
VDS = 32V
VDS= 20V
16
C, Capacitance (pF)
Ciss
12
8
Coss
Crss
4
0
0
50
100
150
200
250
300
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
ID, Drain-to-Source Current (A)
TJ = 175°C
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.0
1000
100µsec
100
10.0
TJ = 25°C
1.0
10
1msec
10msec
DC
10
100
1000
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
0.1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF2804S-7P
350
300
ID , Drain Current (A)
2.0
250
200
150
100
50
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
LIMITED BY PACKAGE
ID = 160A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
τ
2
0.01
Ri (°C/W)
τi
(sec)
0.1951 0.000743
0.3050
0.008219
τ
1
0.001
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
