d. Maximum under steady state conditions is 110 °C/W.
Document Number: 62884
S13-1818-Rev. A, 12-Aug-13
For technical questions, contact:
pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3476DV
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.5 A
R
DS(on)
g
fs
V
GS
= 6 V, I
D
= 3.2 A
V
GS
= 4.5 V, I
D
= 3 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 µs)
Body Diode Voltage
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
Q
rr
t
rr
t
a
t
b
I
F
= 2.8 A, dI/dt = 100 A/µs
I
S
= 2.8 A
0.85
13
20
10.5
9.5
T
C
= 25 °C
3
18
1.2
20
30
ns
A
V
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 40 V, R
L
= 14.3
I
D
2.8 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 40 V, R
L
= 14.3
I
D
2.8 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
0.82
V
DS
= 40 V, V
GS
= 10 V, I
D
= 3.5 A
V
DS
= 40 V, V
GS
= 4.5 V, I
D
= 3.5 A
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
195
116
16
4.9
2.6
0.8
1.3
4.2
8
4
14
3
26
50
12
15
8.2
16
8
21
6
40
75
20
23
ns
7.5
5
nC
pF
V
DS
= 15 V, I
D
= 3.5 A
10
0.077
0.090
0.105
7
0.093
0.108
0.126
S
1.2
80
36
- 4.8
3
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62884
S13-1818-Rev. A, 12-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3476DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
18
V
GS
= 10 V thru 6 V
V
GS
= 5 V
13.5
I
D
- Drain Current (A)
V
GS
= 4.5 V
9
V
GS
= 4 V
4.5
3
2.4
I
D
- Drain Current (A)
1.8
T
C
= 25
°C
1.2
0.6
V
GS
= 3 V
0
0
0.6
1.2
1.8
2.4
3
V
DS
- Drain-to-Source Voltage (V)
T
C
= 125
°C
T
C
= - 55
°C
0
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.15
340
Transfer Characteristics Curves vs. Temp.
R
DS(on)
- On-Resistance (Ω)
0.125
V
GS
= 4.5 V
255
C - Capacitance (pF)
0.1
V
GS
= 6 V
C
iss
170
C
oss
0.075
V
GS
= 10 V
0.05
85
C
rss
0.025
0
4.5
9
I
D
- Drain Current (A)
13.5
18
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.9
I
D
= 3.5 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 20 V
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V, 3.5A
1.6
V
GS
= 6 V, 3.2A
6
V
DS
= 40 V
1.3
V
GS
= 4.5 V, 3A
1
4
V
DS
= 64 V
2
0.7
0
0
1.5
3
4.5
6
Q
g
- Total Gate Charge (nC)
0.4
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62884
S13-1818-Rev. A, 12-Aug-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3476DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
0.300
I
D
= 3.5 A
0.240
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.180
T
J
= 125
°C
0.120
1
0.060
T
J
= 25
°C
0.1
0.0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
0.000
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.55
R
DS(on)
vs. V
GS
vs. Temperature
45
I
D
= 250 μA
2.3
36
V
GS(th)
(V)
2.05
Power (W)
27
1.8
18
1.55
9
1.3
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power (Junction-to-Ambient)
10
I
D
- Drain Current (A)
Limited by R
DS(on)
*
100 μs
1
1 ms
10 ms
0.1
100 ms
0.01
T
A
= 25
°C
0.001
0.1
BVDSS Limited
10 s,
1 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62884
S13-1818-Rev. A, 12-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3476DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
5.2
3.9
I
D
- Drain Current (A)
2.6
1.3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.4
2.0
3.3
Power (W)
0
25
50
75
100
125
150
1.5
Power (W)
2.2
1.0
1.1
0.5
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62884
S13-1818-Rev. A, 12-Aug-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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