VS-ETU1506-M3,VS-ETU1506FP-M3
www.vishay.com
Vishay Semiconductors
Ultra Fast Rectifier, 15 A FRED Pt
®
4
FEATURES
• Low forward voltage drop
• Ultrafast soft recovery time
• 175 °C operating junction temperature
• Low leakage current
2
1
2
1
• Fully isolated package (V
INS
= 2500 V
RMS
)
• True 2 pin package
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-220AC 2L
Base
cathode
4
TO-220 FullPAK 2L
1
Cathode
2
Anode
1
Cathode
2
Anode
DESCRIPTION
State of the art, ultralow V
F
, soft-switching ultrafast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VS-ETU1506-M3
VS-ETU1506FP-M3
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Circuit configuration
TO-220AC 2L, TO-220FullPAK 2L
15 A
600 V
1.1 V
24 ns
175 °C
Single
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
FullPAK
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 151 °C
T
C
= 103 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
15
160
-65 to +175
°C
UNITS
V
A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.35
1.1
0.01
20
12
8
MAX.
-
1.9
1.3
15
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 31-May-17
Document Number: 93534
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU1506-M3,VS-ETU1506FP-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
24
36
40
87
5
9
107
430
53
25
730
MAX.
28
47
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-220AC 2L
Case style TO-220 FullPAK 2L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
-
6
(5)
TYP.
-
1.2
3.7
-
0.5
2
0.07
-
MAX.
175
1.4
4.3
70
-
-
-
12
(10)
ETU1506
ETU1506FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
FULL-PAK
Revision: 31-May-17
Document Number: 93534
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU1506-M3,VS-ETU1506FP-M3
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (μA)
T
J
= 175 °C
100
10
1
0.1
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
10
T
J
= 150 °C
0.01
0.001
0.0001
25 °C
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.5
D = 0.2
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 31-May-17
Document Number: 93534
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU1506-M3,VS-ETU1506FP-M3
www.vishay.com
10
Vishay Semiconductors
Z
thJC
- Thermal Impedance (°C/W)
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
Single
Pulse
(Thermal Resistance)
t
1
- Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FullPAK)
180
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
160
140
DC
120
100
80
60
40
20
0
2
4
6
8
10
12
14
16
170
160
DC
150
140
130
0
2
4
6
8
10
12
14
16
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
30
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FullPAK)
Average Power Loss (W)
25
20
15
10
5
0
0
5
10
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
Revision: 31-May-17
Document Number: 93534
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU1506-M3,VS-ETU1506FP-M3
www.vishay.com
120
110
100
90
80
I
F
= 15 A, 125 °C
900
800
700
600
I
F
= 15 A, 125 °C
Vishay Semiconductors
t
rr
(ns)
60
50
40
30
20
10
100
typical value
1000
I
F
= 15 A, 25 °C
Q
rr
(nC)
70
500
400
300
200
100
0
100
1000
I
F
= 15 A, 25 °C
typical value
dI
F
dt (A/μs)
Fig. 9 - Typical Reverse Recovery vs. dI
F
/dt
dI
F
dt (A/μs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 31-May-17
Document Number: 93534
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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