Freescale Semiconductor
Technical Data
Document Number: MRF7S15100H
Rev. 2, 6/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1470 to
1510 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
600 mA, P
out
= 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 19.5 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW
Output Power
•
Typical P
out
@ 1 dB Compression Point
'
100 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S15100HR3
MRF7S15100HSR3
1470 - 1510 MHz, 23 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S1500HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S1500HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
A
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
75
0.36
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 55 W CW
Case Temperature 77°C, 23 W CW
Symbol
R
θJC
Value
(2,3)
0.65
0.74
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF7S15100HR3 MRF7S15100HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DD
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 174
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.74 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.6
300
176
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2
0.1
2
2.7
0.2
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 600 mA, P
out
= 23 W Avg., f = 1507.5 MHz, Single - Carrier
W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
η
D
PAR
ACPR
IRL
18
30
5.9
—
—
19.5
32
6.2
- 38
- 15
21
—
—
- 35
-8
dB
%
dB
dBc
dB
(continued)
MRF7S15100HR3 MRF7S15100HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 90 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 23 W Avg.
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ P
out
= 100 W CW
Average Group Delay @ P
out
= 100 W CW, f = 1490 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 100 W CW,
f = 1490 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
100
40
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 600 mA, 1470 - 1510 MHz Bandwidth
VBW
res
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
—
70
0.2
4.5
1.9
23
0.010
0.007
—
—
—
—
—
—
—
MHz
dB
°
ns
°
dB/°C
W/°C
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
3
R2
B1
V
BIAS
+
R3
C5
C4
C3
R1
RF
INPUT Z1
C2
Z2
Z3
Z4
Z5
C1
L3
L2
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
L1
+
C8
Z26
Z14
Z15
Z28
C11
C10
C9
V
SUPPLY
Z16 Z17 Z18 Z19 Z20
C6
Z21 Z22 Z23
Z24
Z25
RF
OUTPUT
Z29
Z27
DUT
V
SUPPLY
C7
C12
C13
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
0.084″
0.149″
0.149″
0.149″
0.084″
0.084″
0.218″
0.084″
0.224″
0.084″
1.288″
1.288″
1.288″
1.330″
x 0.078″ Microstrip
x 0.153″ Microstrip
x 0.303″ Microstrip
x 0.065″ Microstrip
x 0.146″ Microstrip
x 0.104″ Microstrip
x 0.080″ Microstrip
x 0.206″ Microstrip
x 0.085″ Microstrip
x 0.369″ Microstrip
x 0.206″ Microstrip
x 0.144″ Microstrip
x 0.369″ Microstrip
x 0.112″ Microstrip
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26, Z27
Z28, Z29
PCB
1.330″ x 0.538″ Microstrip
0.270″ x 0.280″ Microstrip
0.187″ x 0.150″ Microstrip
0.084″ x 0.042″ Microstrip
0.184″ x 0.292″ Microstrip
0.084″ x 0.066″ Microstrip
0.886″ x 0.194″ Microstrip
0.300″ x 0.084″ Microstrip
0.084″ x 0.215″ Microstrip
0.221″ x 0.075″ Microstrip
0.084″ x 0.175″ Microstrip
0.200″ x 0.525″ Microstrip
0.235″ x 0.102″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF7S15100HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S15100HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C6, C7, C8
C2
C3
C4, C9, C13
C5, C10
C11, C12
L1, L2, L3
R1, R2
R3
Description
Short Ferrite Bead
15 pF Chip Capacitors
0.5 pF Chip Capacitor
10 pF Chip Capacitor
6.8
μF,
50 V Chip Capacitors
100
μF,
50 V Electrolytic Capacitors
2.2
μF,
50 V Chip Capacitors
7.15 nH Inductors
100
Ω,
1/4 W Chip Resistors
10 KΩ, 1/4 W Chip Resistor
Part Number
2743019447
ATC100B150JT500XT
ATC100B0R5BT500XT
ATC100B100JT500XT
C4532JB1H685MT
222215371101
C3225JB2A225MT
1606 - TLC
CRCW12061000FKEA
CRCW12061002FKEA
Manufacturer
Fair - Rite
ATC
ATC
ATC
TDK
Vishay
TDK
Coilcraft
Vishay
Vishay
MRF7S15100HR3 MRF7S15100HSR3
4
RF Device Data
Freescale Semiconductor
R3
B1
R2
C3
C4
R1
C5
C2
CUT OUT AREA
C1
L1
C8
C11
C9
C10
C6
L3
L2
C7
MRF7S15100H/HS Rev. 3
C12
C13
Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
5
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