PD - 94255
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D
2
Pak & TO-262 packages
C
IRG4BC10SD-S
IRG4BC10SD-L
Standard Speed
CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.10V
@V
GE
= 15V, I
C
= 2.0A
n-ch an nel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
D
2
Pak
IRG4BC10SD-S
Max.
600
14
8.0
18
18
4.0
18
± 20
38
15
-55 to +150
TO-262
IRG4BC10SD-L
Units
V
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Min.
Typ.
–––
–––
0.50
–––
–––
2.0(0.07)
Max.
3.3
7.0
–––
80
40
–––
Units
°C/W
Junction-to-Case - IGBT
–––
Junction-to-Case - Diode
–––
Case-to-Sink, flat, greased surface
–––
Junction-to-Ambient, typical socket mount
U
–––
Junction-to-Ambient (PCB Mount, steady state)
V
–––
Weight
–––
g (oz)
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1
06/12/01
IRG4BC10SD-S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
S
600
—
Temperature Coeff. of Breakdown Voltage — 0.64
Collector-to-Emitter Saturation Voltage
— 1.58
— 2.05
— 1.68
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
— -9.5
Forward Transconductance
T
3.65 5.48
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
1.5
—
1.4
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
— V/°C V
GE
= 0V, I
C
= 1.0mA
1.8
I
C
= 8.0A
V
GE
= 15V
—
V
I
C
= 14.0A
See Fig. 2, 5
—
I
C
= 8.0A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 100V, I
C
=8.0A
250
µA
V
GE
= 0V, V
CE
= 600V
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.8
V
I
C
=4.0A
See Fig. 13
1.7
I
C
=4.0A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
15
22
2.42 3.6
6.53 9.8
76
—
32
—
815 1200
720 1080
0.31 —
3.28 —
3.60 10.9
1.46 2.6
70
—
36
—
890
—
890
—
3.83 —
7.5
—
280
—
30
—
4.0
—
28
42
38
57
2.9 5.2
3.7 6.7
40
60
70 105
280
—
235
—
Conditions
I
C
= 8.0A
V
CC
= 400V
See Fig. 8
V
GE
= 15V
T
J
= 25°C
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
I
C
= 5.0A
T
J
= 150°C, See Fig. 10,11, 18
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
ƒ = 1.0MHz
T
J
= 25°C See Fig.
14
I
F
=4.0A
T
J
= 125°C
T
J
= 25°C See Fig.
T
J
= 125°C
15
V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C
16
di/dt = 200A/µs
T
J
= 25°C See Fig.
T
J
= 125°C
17
nC
ns
mJ
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Details of note
Q
through
T
are on the last page
2
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IRG4BC10SD-S/L
10.0
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
8.0
Load Current ( A )
6.0
60% of rated
voltage
4.0
Ideal diodes
2.0
0.0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 25
°
C
T = 150
°
C
J
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector Current (A)
10
10
T
J
= 150
°
C
T
J
= 25
°
C
V
= 50V
5µs PULSE WIDTH
CC
5µs PULSE WIDTH
10
6
8
12
1
0.5
V
= 15V
80µs PULSE WIDTH
GE
1.0
1.5
2.0
2.5
3.0
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BC10SD-S/L
16
3.00
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
I
C
= 16 A
12
2.50
8
2.00
I
C
= 8 A
4
1.50
I
C
= 4 A
0
25
50
75
100
125
150
1.00
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10SD-S/L
500
400
C, Capacitance (pF)
Cies
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 8A
15
300
C
oes
200
10
100
C
res
5
0
1
10
100
0
0
5
10
15
20
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.60
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
3.55
I
C
= 8A
3.50
100
R
G
=
100Ω
Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
16
A
10
I
C
=
8
A
I
C
=
4
A
1
3.45
3.40
3.35
3.30
0
20
40
60
80
100
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
G
Gate Resistance (Ohm)
R
,
, Gate Resistance (Ω)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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