The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward
Transconductance
a
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 2.8 A
V
GS
= - 2.5 V, I
D
= - 2.3 A
V
GS
= - 1.8 V, I
D
= - 0.54 A
V
DS
= - 10 V, I
D
= - 2.8 A
Min.
- 20
Typ.
Max.
Unit
V
- 16.2
2.1
- 0.4
-1
± 100
-1
- 10
-8
0.078
0.109
0.153
7
355
0.094
0.131
0.185
mV/°C
V
nA
µA
A
Ω
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 4.5 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 4.5 A
f = 1 MHz
V
DD
= - 10 V, R
L
= 2.2
Ω
I
D
≅
- 4.5 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
75
50
8.5
4.9
0.75
1.2
8
10
35
40
50
5
15
55
60
75
10
15
30
15
13
7.4
pF
nC
Ω
ns
V
DD
= - 10 V, R
L
= 2.2
Ω
I
D
≅
- 4.5 A, V
GEN
= - 8 V, R
g
= 1
Ω
10
20
10
www.vishay.com
2
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
New Product
SiA811DJ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4.5 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 4.5 A, V
GS
= 0 V
- 0.85
30
13
10
15
T
C
= 25 °C
- 4.5
-8
- 1.2
60
26
A
V
ns
nC
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 1 A
I
F
= 1 A, T
J
= 125 °C
V
r
= 5 V
V
r
= 5 V, T
J
= 85 °C
Maximum Reverse Leakage Current
I
rm
V
r
= 20 V
V
r
= 20 V, T
J
= 85 °C
V
r
= 20 V, T
J
= 125 °C
Junction Capacitance
C
T
V
r
= 10 V
Min.
Typ.
0.41
0.36
0.015
0.5
0.02
0.7
5
60
Max.
0.45
0.41
0.08
5.0
0.10
7
50
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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