VS-15EWH06FN-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
2, 4
• Hyperfast recovery time, reduced Q
rr
and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
N/C
3
Anode
TO-252AA (D-PAK)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-252AA (D-PAK)
15 A
600 V
1.2 V
22 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 130 °C
T
J
= 25 °C
T
C
= 130 °C, f = 20 kHz, d = 50 %
TEST CONDITIONS
VALUES
600
15
120
30
-55 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.6
1.2
-
-
12
8
MAX.
-
2.1
1.6
50
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 04-Oct-16
Document Number: 93237
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15EWH06FN-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
TYP.
22
36
75
4.8
7.2
90
300
MAX.
30
-
-
-
-
-
-
A
nC
ns
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature
range
Thermal resistance, junction to case per leg
Thermal resistance, junction to ambient per leg
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
1000
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
TEST CONDITIONS
MIN.
-55
-
-
TYP.
-
1.4
-
0.3
0.01
MAX.
175
1.8
70
UNITS
°C
°C/W
g
oz.
15EWH06FN
I
F
- Instantaneous Forward Current (A)
100
T
J
= 175 °C
10
T
J
= 125 °C
1
I
R
- Reverse Current (μA)
100
10
1
0.1
0.01
0.001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
T
J
= 25 °C
0.1
0.2
0.7
1.2
1.7
2.2
2.7
93237_02
0
100
200
300
400
500
600
93237_01
V
F
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
C
T
- Junction Capacitance (pF)
10
1
0
93237_03
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 04-Oct-16
Document Number: 93237
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15EWH06FN-M3
www.vishay.com
Vishay Semiconductors
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
Single
pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
1
93237_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
170
160
DC
100
90
80
70
I
F
= 15 A, T
J
= 125 °C
t
rr
(ns)
Square
wave (D = 0.50)
Rated V
R
applied
See
note (1)
150
140
130
120
110
0
5
10
15
20
25
60
50
40
30
20
10
0
100
1000
I
F
= 15 A, T
J
= 25 °C
93237_05
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
35
93237_07
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
600
500
400
Average Power Loss (W)
30
25
RMS limit
20
15
10
5
0
0
5
10
15
20
25
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
Q
rr
(nC)
I
F
= 15 A, T
J
= 125 °C
300
200
100
I
F
= 15 A, T
J
= 25 °C
0
100
1000
93237_06
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
93237_08
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 04-Oct-16
Document Number: 93237
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15EWH06FN-M3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 04-Oct-16
Document Number: 93237
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15EWH06FN-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
15
2
E
3
W
4
H
5
06
6
FN
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (15 = 15 A)
Circuit configuration:
E = single diode
Package identifier:
W = D-PAK
H = hyperfast recovery
Voltage rating (06 = 600 V)
FN = TO-252AA
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-15EWH06FN-M3
VS-15EWH06FNTR-M3
VS-15EWH06FNTRL-M3
VS-15EWH06FNTRR-M3
QUANTITY PER T/R
75
2000
3000
3000
MINIMUM ORDER QUANTITY
3000
2000
3000
3000
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95627
www.vishay.com/doc?95176
www.vishay.com/doc?95033
www.vishay.com/doc?96040
Revision: 04-Oct-16
Document Number: 93237
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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