Standard
Power MOSFET
N-Channel Enhancement Mode
IRFP 260
V
DSS
I
D (cont)
R
DS(on)
= 200 V
=
46 A
= 55 mΩ
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GS
= 1 MΩ
Maximum Ratings
200
200
±20
±30
46
184
46
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
TO-247 AD
Continuous
Transient
T
C
T
C
T
C
= 25°C
= 25°C, pulse width limited by T
JM
= 25°C
D (TAB)
28
5
280
-55 ... +150
150
-55 ... +150
G = Gate,
S = Source,
D = Drain,
TAB = Drain
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
I
S
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Mounting torque
1.13/10 Nm/lb.in.
6
300
g
°C
Features
• International standard package
JEDEC TO-247 AD
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
200
2
4
±100
T
J
= 25°C
T
J
= 125°C
25
250
V
V
nA
µA
µA
Ω
Applications
• Switch-mode and resonant-mode
power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 200V
V
DS
= 160V
V
GS
= 0 V
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
R
DS(on)
V
GS
= 10 V, I
D
= 28 A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
0.055
IXYS reserves the right to change limits, test conditions, and dimensions.
97545(1/98)
© 2000 IXYS All rights reserved
1-2
IRFP 260
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
24
34
3900
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
760
320
23
V
GS
= 10 V, V
DS
= 100 V
DSS
, I
D
= 46A
R
G
= 4.3
Ω
(External)
30
90
28
230
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
42
110
0.45
0.24
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
TO-247 AD (IXTH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 28 A, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
46
180
1.8
260
2.34
590
7.2
A
A
V
ns
uC
J
K
L
M
N
1.5 2.49
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 0.5 I
S
, -di/dt = 100 A/µs, V
R
= 100 V
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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