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PZT2907AT3G

产品描述PNP Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 4000-REEL
产品类别分立半导体    晶体管   
文件大小102KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准  
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PZT2907AT3G概述

PNP Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 4000-REEL

PZT2907AT3G规格参数

参数名称属性值
Brand Nameonsemi
是否无铅不含铅
Objectid2063261315
零件包装代码SOT-223 (TO-261) 4 LEAD
包装说明HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
针数4
制造商包装代码0.0318
Reach Compliance Codecompliant
Country Of OriginMalaysia
ECCN代码EAR99
Factory Lead Time54 weeks
Samacsys DescriptionPNP Silicon Epitaxial Transistor Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.5W Surface Mount SOT-223
Samacsys Manufactureronsemi
Samacsys Modified On2023-03-07 16:10:32
YTEOL4
JESD-609代码e3
湿度敏感等级1
峰值回流温度(摄氏度)260
认证状态Not Qualified
端子面层MATTE TIN
处于峰值回流温度下的最长时间30

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PZT2907A
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
http://onsemi.com
4
1
2
3
NPN Complement is PZT2222AT1
The SOT-223 Package can be Soldered Using Wave or Reflow
SOT-223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints. The Formed Leads Absorb Thermal Stress during Soldering
Eliminating the Possibility of Damage to the Die
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−60
−60
−5.0
−600
Unit
Vdc
Vdc
Vdc
mAdc
SOT−223
CASE 318E
STYLE 1
COLLECTOR
2, 4
1
BASE
3
EMITTER
MARKING DIAGRAM
AYW
P2F
G
G
1
P2F
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance Junction−to−Ambient
(Note 1)
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
Operating and Storage Temperature Range
1. FR−4 with 1 oz and 713 mm
2
of copper area.
Symbol
P
D
R
qJA
T
L
Max
1.5
12
83.3
Unit
W
mW/°C
°C/W
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
PZT2907AT1G
SPZT2907AT1G
PZT2907AT3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1,000 / Tape & Reel
1,000 / Tape & Reel
4,000 / Tape & Reel
260
10
−65
to
+150
°C
Sec
°C
T
J
, T
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
August, 2013
Rev. 10
1
Publication Order Number:
PZT2907AT1/D

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