STB11NK40Z, STP11NK40ZFP
STP11NK40Z
N-channel 400 V, 0.49
Ω
9 A, TO-220, TO-220FP, D
2
PAK
,
Zener-protected SuperMESH
TM
Power MOSFET
Features
Type
STB11NK40Z
STP11NK40Z
STP11NK40ZFP
■
■
■
■
■
V
DSS
400V
400V
400V
R
DS(on)
<0.55Ω
<0.55Ω
<0.55Ω
I
D
10A
10A
10A
Pw
110W
110W
1
3
3
2
1
2
30W
TO-220
TO-220FP
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
1
3
D
2
PAK
Applications
■
Switching application
Figure 1.
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Table 1.
Device summary
Order code
Marking
B11NK40Z
P11NK40Z
P11NK40ZFP
Package
D²PAK
TO-220
TO-220FP
Packaging
Tape and reel
Tube
Tube
STB11NK40ZT4
STP11NK40Z
STP11NK40ZFP
April 2009
Doc ID 8936 Rev 7
1/17
www.st.com
17
Contents
STB11NK40Z, STP11NK40ZFP, STP11NK40Z
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 7
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 8936 Rev 7
STB11NK40Z, STP11NK40ZFP, STP11NK40Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(2)
P
TOT
Absolute maximum ratings
Value
Parameter
TO-220/D²PAK
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20KΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
9
5.67
36
110
0.88
3500
4.5
--
-55 to 150
2500
400
400
± 30
9
(1)
5.67
(1)
36
(1)
30
0.24
TO-220FP
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Unit
V
ESD(G-S)
dv/dt
(3)
V
ISO
T
J
T
stg
Gate source ESD (HBM-C= 100pF,
R= 1.5kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
≤
9A, di/dt
≤
200 A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
Table 3.
Symbol
R
thj-case
R
thj-a
T
l
Thermal data
Value
Parameter
TO-220/D²PAK
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1.14
62.5
300
TO-220FP
4.2
°C/W
°C/W
°C
Unit
Doc ID 8936 Rev 7
3/17
Electrical ratings
STB11NK40Z, STP11NK40ZFP, STP11NK40Z
Table 4.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
Single pulse avalanche energy
(starting T
j
=25°C, Id=Iar, Vdd=50V)
Value
9
190
Unit
A
mJ
4/17
Doc ID 8936 Rev 7
STB11NK40Z, STP11NK40ZFP, STP11NK40Z
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 1mA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ± 20V, V
DS
= 0
V
DS
= V
GS
, I
D
= 100µA
V
GS
= 10V, I
D
= 4.5A
3
3.75
0.49
Min.
400
1
50
±
10
Typ.
Max.
Unit
V
µA
µA
µA
V
Ω
4.5
0.55
Table 6.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
V
DS
=15V, I
D
= 4.5A
Min.
-
Typ.
5.8
930
140
30
78
32
6
18.5
Max.
-
Unit
S
pF
pF
pF
pF
nC
nC
nC
V
DS
=25V, f=1 MHz, V
GS
=0
-
-
C
oss eq(2).
Equivalent output
capacitance
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
GS
=0, V
DS
=0V to 320V
V
DD
=320V, I
D
= 9A
V
GS
=10V
(see Figure 18)
-
-
-
-
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
inceases from 0 to 80% V
DSS
Doc ID 8936 Rev 7
5/17
NXP MCU
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