MOSFET 60V 500mA N-Channel
参数名称 | 属性值 |
Brand Name | ON Semiconductor |
是否无铅 | 不含铅 |
厂商名称 | ON Semiconductor(安森美) |
零件包装代码 | TO-92 |
包装说明 | CYLINDRICAL, O-PBCY-T3 |
针数 | 3 |
制造商包装代码 | 29-11 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | EUROPEAN PART NUMBER |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (Abs) (ID) | 0.5 A |
最大漏极电流 (ID) | 0.5 A |
最大漏源导通电阻 | 5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-226AA |
JESD-30 代码 | O-PBCY-T3 |
JESD-609代码 | e1 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 0.35 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | 40 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
BS170RL1G | BS170RLRM | BS170RLRP | BS170RLRA | BS170ZL1G | BS170RL1 | BS170RLRPG | |
---|---|---|---|---|---|---|---|
描述 | MOSFET 60V 500mA N-Channel | MOSFET 60V 500mA N-Channel | MOSFET 60V 500mA N-Channel | MOSFET 60V 500mA N-Channel | MOSFET 60V 500mA N-Channel | MOSFET 60V 500mA N-Channel | MOSFET 60V 500mA N-Channel |
厂商名称 | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) |
零件包装代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
包装说明 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
针数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
制造商包装代码 | 29-11 | CASE 29-11 | CASE 29-11 | 29-11 | 29-11 | CASE 29-11 | 29-11 |
Reach Compliance Code | unknown | not_compliant | not_compliant | not_compliant | unknown | not_compliant | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (Abs) (ID) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
最大漏极电流 (ID) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
最大漏源导通电阻 | 5 Ω | 5 Ω | 5 Ω | 5 Ω | 5 Ω | 5 Ω | 5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA |
JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
JESD-609代码 | e1 | e0 | e0 | e0 | e1 | e0 | e1 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
峰值回流温度(摄氏度) | 260 | 240 | 240 | 240 | 260 | 240 | 260 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 0.35 W | 0.35 W | 0.35 W | 0.83 W | 0.35 W | 0.35 W | 0.35 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn80Pb20) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 40 | 30 | 30 | 30 | 40 | 30 | 40 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Brand Name | ON Semiconductor | - | - | ON Semiconductor | ON Semiconductor | - | ON Semiconductor |
是否无铅 | 不含铅 | - | - | 含铅 | 不含铅 | - | 不含铅 |
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