MMT10B230T3,
MMT10B260T3,
MMT10B310T3
Preferred Device
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
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These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
BIDIRECTIONAL TSPD (
100 AMP SURGE
265 thru 365 VOLTS
MT1
MT2
)
•
Outstanding High Surge Current Capability: 100 A 10x1000
msec
•
•
•
•
•
•
•
•
•
Guaranteed at the extended temp range of −20°C to 65°C
The MMT10B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Complies with GR1089 Second Level Surge Spec at 500 A
2x10
msec
Waveforms
Indicates UL Registered − File #E210057
Pb−Free Packages are Available
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MARKING DIAGRAMS
AYWW
RPDx
G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
RPDx
= Device Code
x
= F, G, or J
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 8
Publication Order Number:
MMT10B230T3/D
MMT10B230T3, MMT10B260T3, MMT10B310T3
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Off−State Voltage − Maximum
MMT10B230T3
MMT10B260T3
MMT10B310T3
Maximum Pulse Surge Short Circuit Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2) (−20°C to +65°C)
2 x 10
msec
10 x 700
msec
10 x 1000
msec
Maximum Non−Repetitive Rate of Change of On−State Current
Double Exponential Waveform,
R = 2.0, L = 1.5
mH,
C = 1.67
mF,
I
pk
= 110A
Symbol
V
DM
Value
"170
"200
"270
A(pk)
Unit
V
I
PPS1
I
PPS2
I
PPS3
di/dt
"500
"180
"100
"100
A/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
THERMAL CHARACTERISTICS
Characteristic
Operating Temperature Range
Blocking or Conducting State
Overload Junction Temperature − Maximum Conducting State Only
Instantaneous Peak Power Dissipation (I
pk
= 100 A, 10x1000
msec
@ 25°C)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
T
J1
T
J2
P
PK
T
L
Max
−40 to + 125
+ 175
4000
260
Unit
°C
°C
W
°C
ORDERING INFORMATION
Device
MMT10B230T3
MMT10B230T3G
MMT10B260T3
MMT10B260T3G
MMT10B310T3
MMT10B310T3G
Package
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
(12mm) Tape & Reel
2500 Units per Reel
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MMT10B230T3, MMT10B260T3, MMT10B310T3
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, I
SC
= 1.0 A, Vdc = 1000 V)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms), MMT10B230T3, G
R
I
= 1.0 kW, t = 0.5 cycle) (Note 3)
MMT10B260T3, G
MMT10B310T3, G
(+65°C)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
On−State Voltage (I
T
= 1.0 A)
(PW
≤
300
ms,
Duty Cycle
≤
2%) (Note 3)
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kW)
Both polarities
Holding Current (Both polarities)
V
S
= 500 Volts; I
T
(Initiating Current) =
"1.0
A
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
3. Measured under pulse conditions to reduce heating.
(Note 3)
I
D1
I
D2
V
T
I
BO
I
H
dv/dt
C
O
V
(BO)
−
−
−
−
−
−
dV
(BO)
/dT
J
V
(BR)
−
−
−
−
−
−
−
150
2000
−
−
190
240
280
−
−
1.53
260
270
−
65
160
−
−
−
2.0
5.0
5.0
−
−
−
−
200
mA
V
mA
mA
V/ms
pF
−
−
−
−
−
−
−
0.08
265
320
365
290
340
400
−
%/°C
V
Symbol
V
(BO)
−
−
−
−
−
−
−
−
−
−
−
−
265
320
365
290
340
400
V
Min
Typ
Max
Unit
V
(+65°C)
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
I
D1
, I
D2
V
D1
, V
D2
V
BR
V
BO
I
BO
I
H
V
TM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
+ Voltage
V
D1
V
D2
V
(BR)
I
H
I
D1
I
D2
I
(BO)
V
TM
V
(BO)
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3
MMT10B230T3, MMT10B260T3, MMT10B310T3
100
μ
I D1, OFF−STATE CURRENT ( A)
V
D1
= 50V
340
V BR , BREAKDOWN VOLTAGE (VOLTS)
320
300
280
260
240
220
200
180
160
− 50
− 25
0
25
50
TEMPERATURE (°C)
75
100
125
MMT10B230T3
MMT10B260T3
MMT10B310T3
10
1
0.1
0.01
0
20
40
60
80
100
TEMPERATURE (°C)
120
140
Figure 1. Off−State Current versus Temperature
Figure 2. Breakdown Voltage versus Temperature
360
V BO , BREAKOVER VOLTAGE (VOLTS)
I H , HOLDING CURRENT (mA)
75
340
320
300
280
260
240
220
200
180
− 50
− 25
0
25
50
TEMPERATURE (°C)
100
125
MMT10B230T3
MMT10B260T3
MMT10B310T3
1000
900
800
700
600
500
400
300
200
100
− 50
− 25
0
25
50
TEMPERATURE (°C)
75
100
125
Figure 3. Breakover Voltage versus Temperature
Figure 4. Holding Current versus Temperature
100
Ipp − PEAK PULSE CURRENT − %Ipp
100
Peak
Value
t
r
= rise time to peak value
t
f
= decay time to half value
CURRENT (A)
10
50
Half Value
0
0 t
r
t
f
TIME (ms)
1
0.01
0.1
1
TIME (sec)
10
100
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
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4
MMT10B230T3, MMT10B260T3, MMT10B310T3
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
RING
PPTC*
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
RING
HEAT COIL
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5
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