Power Module
1200V 300A IGBT Module
MG12300D-BA1MM
Features
• Ultra low loss
• High ruggedness
• High short circuit
capability
Applications
• Inverter
• Converter
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E71639
RoHS
®
• Positive temperature
coefficient
• With fast free-wheeling
diodes
• SMPS and UPS
• Induction heating
• Welder
Module Characteristics
(T
C
= 25°C, unless otherwise specified)
Symbol
R
thJC
R
thJCD
Torque
Torque
Weight
Parameters
Junction-to-Case Thermal
Resistance
Module-to-Sink
Module Electrodes
Test Conditions
Per IGBT
Per Inverse Diode
Recommended (M6)
Recommended (M6)
3
2.5
285
Min
Typ
Max
0.07
0.15
5
5
Unit
K/W
K/W
N·m
N·m
g
Absolute Maximum Ratings
(T
C
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
Cpuls
P
tot
T
J
T
STG
V
isol
Diode
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG12300D-BA1MM
102
1
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Parameters
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Pulsed Collector Current
Power Dissipation Per IGBT
Junction Temperature Range
Storage Temperature Range
Insulation Test Voltage
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward
Current
Test Conditions
Values
1200
±20
Unit
V
V
A
A
A
W
°C
°C
V
V
A
A
A
A
T
C
=25°C
T
C
=80°C
T
C
=25°C, t
p
=1ms
T
C
=80°C, t
p
=1ms
450
310
900
620
1800
-40 to +150
-40 to +125
AC, t=1min
3000
1200
T
C
=25°C
T
C
=80°C
T
J
=45°C, t=10ms, Sine
T
J
=45°C, t=8.3ms, Sine
380
260
380
2260
2560
Power Module
1200V 300A IGBT Module
Electrical and Thermal Specifications
(T
C
= 25°C, unless otherwise specified)
Symbol
IGBT
V
GE(th)
V
CE(sat)
I
CES
I
GES
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Diode
V
F
t
rr
I
RRM
Q
rr
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
I
F
=300A , V
GE
=0V, T
J
=25°C
I
F
=300A , V
GE
=0V, T
J
=125°C
I
F
=300A , V
R
=800V
di
F
/dt=-1000A/μs
T
J
=125°C
2.0
1.7
410
120
25
2.44
2.20
V
V
ns
A
μC
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
V
CC
=600V
I
C
=300A
R
G
=3.4Ω
V
GE
=±15V
Inductive Load
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
V
CE
=25V, V
GE
=0V, f =1MHz
V
CE
=V
GE
, I
C
=12mA
I
C
=300A, V
GE
=15V, T
J
=25°C
I
C
=300A, V
GE
=15V, T
J
=125°C
V
CE
=1200V, V
GE
=0V, T
J
=25°C
V
CE
=1200V, V
GE
=0V, T
J
=125°C
V
CE
=0V,V
GE
=±20V
V
CC
=600V, I
C
=300A , V
GE
=±15V
-400
3060
21.2
1.42
0.94
190
220
60
60
460
530
55
75
22.4
33.4
19.6
30.6
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
nF
5.0
6.2
1.9
2.1
0.4
10
400
2
7
.0
V
V
V
mA
mA
nA
nC
Parameters
Test Conditions
Min
Typ
Max
Unit
MG12300D-BA1MM
2
103
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1200V 300A IGBT Module
Figure 1: Typical Output Characteristics
600
500
400
I
C
(A)
300
T
J
=125°C
Figure 2: Typical Transfer characteristics
600
500
400
I
C
(A)
V
CE
=20V
T
J
=25°C
300
200
T
J
=125°C
T
J
=25°C
200
100
0
0
100
0.5
1
1.5
2
V
CE(sat)
V
2.5
3
3.5
0
0
2
4
6
8
V
GE
V
10
12
14
Figure 3: Switching Energy vs. Collector Current
250
200
V
CC
=600V
R
G
=3.4ohm
V
GE
=±15V
T
J
=125°C
Figure 4: Switching Energy vs. Gate Resistor
100
80
60
40
E
off
V
CC
=600V
I
C
=300A
V
GE
=±15V
T
J
=125°C
E
on
E
on
E
off
(mJ)
E
on
100
E
off
50
0
0
E
on
E
off
(mJ)
800
1000
150
20
200
400
I
C
600
A
0
0
5
10
R
G
15
ohm
20
25
Figure 5: Switching Times vs. Collector Current
10
3
t
d(off)
Figure 6: Switching Times vs. Gate Resistor
10
4
t
d(on)
10
3
t
d(off)
t (ns)
10
2
t
r
t
f
V
CC
=600V
R
G
=3.4ohm
V
GE
=±15V
T
J
=125°C
t (ns)
t
d(on)
10
2
t
f
t
r
V
CC
=600V
I
C
=300A
V
GE
=±15V
T
J
=125°C
10
1
0
60
120 180
I
C
240
A
300
360
420
10
1
0
5
10
15
R
G
20
ohm
25
30
35
MG12300D-BA1MM
104
3
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1200V 300A IGBT Module
Figure 7: Gate Charge characteristics
25
20
15
10
5
0
0
V
CC
=600V
I
C
=300A
T
J
=25°C
Figure 8: Typical Capacitances vs. V
CE
100
V
GE
=0V
f=1MHz
10
C
ies
V
GE
(V)
C (nF)
C
oes
1
C
res
0.4
0.8
Q
g
1.2
µC
1.6
2.0
0.1
0
5
10
15
20
V
CE
V
25
30
35
Figure 9: Reverse Biased Safe Operating Area
1200
1000
800
I
Cpuls
(A)
600
400
200
0
0
T
J
=150°C
T
C
=25°C
V
GE
=15V
Figure 10: Short Circuit Safe Operating Area
6000
5000
4000
I
Csc
(A)
3000
2000
1000
600 800 1000 1200 1400
V
CE
V
T
J
=150°C
T
C
=25°C
V
GE
=15V
t
sc
10µs
200
400
0
0
200
400 600 800 1000 1200 1400
V
CE
V
Figure 11: Rated Current vs. T
C
600
500
400
I
C
(A)
T
J
=150°C
V
GE
15V
Figure 12: Diode Forward Characteristics
600
500
400
T
J
=125°C
I
F
(A)
300
200
100
0
0
50
75 100 125 150 175
T
C
Case Temperature(°C)
105
300
200
T
J
=25°C
100
0
25
0
0.5
1.0
1.5 2.0
V
F
V
2.5
3
3.5
MG12300D-BA1MM
4
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1200V 300A IGBT Module
Figure 13: Transient Thermal Impedance of IGBT
1
Figure 14: Transient Thermal Impedance of Diode
1
10
Z
thJC
(K/W)
-1
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-1
10
-2
10
-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10
-3
Z
thJC
(K/W)
10
-3
10
-4 -4
-3
-2
-1
10
10
10
10
1
Rectangular Pulse Duration (seconds)
10
-4 -4
10
10
-3
10
-2
10
-1
1
Rectangular Pulse Duration (seconds)
Dimensions-Package D
2.8x0.5
Circuit Diagram
1
3
2
3-M6
4
5
6
7
MG12300D-BA1MM
5
106
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
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