MJF122, MJF127
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
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•
•
•
•
•
•
•
•
Electrically Similar to the Popular TIP122 and TIP127
100 V
CEO(sus)
5.0 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain
−
2000 (Min) @ I
C
= 3 Adc
UL Recognized, File #E69369, to 3500 V
RMS
Isolation
Pb−Free Packages are Available*
Rating
Symbol
V
CEO
V
CB
V
EB
Value
100
100
5
Unit
Vdc
Vdc
Vdc
COMPLEMENTARY SILICON
POWER DARLINGTONS
5.0 A, 100 V, 30 W
NPN
COLLECTOR 2
PNP
COLLECTOR 2
BASE
1
BASE
1
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Î Î Î
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Î Î Î
Î Î Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H.
≤
30%, T
A
= 25°C)
Per Figure 14
Collector Current
−
Continuous
Peak
Base Current
V
ISOL
4500
V
RMS
I
C
I
B
5
8
Adc
Adc
0.12
Total Power Dissipation (Note 2)
@ T
C
= 25_C
Derate above 25_C
P
D
30
0.24
W
W/_C
W
W/_C
I
C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
2
0.016
Operating and Storage Junction Temperat-
ure Range
T
J
, T
stg
−65
to
+ 150
MAXIMUM RATINGS
EMITTER 3
MJF122
EMITTER 3
MJF127
MARKING
DIAGRAM
MJF12xG
AYWW
TO−220
CASE 221D−02
STYLE 2
1
2
x
G
A
Y
WW
3
= 2 or 7
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
MJF122
MJF122G
MJF127
MJF127G
Package
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJA
R
qJC
T
L
Max
4.1
Unit
Thermal Resistance, Junction−to−Ambient
62.5
_C/W
_C/W
_C
Thermal Resistance, Junction−to−Case
(Note 2)
Lead Temperature for Soldering Purpose
260
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
mounting surface (in a location beneath the die), the device mounted on a
heatsink with thermal grease and a mounting torque of
≥
6 in. lbs.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJF122/D
©
Semiconductor Components Industries, LLC, 2008
September, 2008
−
Rev. 7
1
MJF122, MJF127
V
2
APPROX.
+8 V
0
V
1
APPROX.
-12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
51
R
B
≈
8k
≈
120
D
1
t, TIME (
μ
s)
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Î
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Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
100
−
−
−
Max
−
Unit
Vdc
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
V
CEO(sus)
I
CEO
I
CBO
I
EBO
h
FE
10
10
2
mAdc
mAdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
Emitter Cutoff Current (V
BE
= 5 Vdc, I
C
= 0)
mAdc
−
ON CHARACTERISTICS
(Note 3)
DC Current Gain (I
C
= 0.5 Adc, V
CE
= 3 Vdc)
DC Current Gain
(I
C
= 3 Adc, V
CE
= 3 Vdc)
1000
2000
−
−
−
4
−
−
Collector−Emitter Saturation Voltage (I
C
= 3 Adc, I
B
= 12 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 20 mAdc)
Base−Emitter On Voltage (I
C
= 3 Adc, V
CE
= 3 Vdc)
V
CE(sat)
V
BE(on)
h
fe
2
3.5
Vdc
Vdc
−
2.5
−
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJF127
MJF122
C
ob
−
−
300
200
pF
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
5
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
V
CC
- 30 V
R
C
TUT
SCOPE
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
t
s
t
f
t
r
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
0.2
t
d
@ V
BE(off)
= 0 V
25
ms
+4 V
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
PNP
NPN
0.5 0.7 1
2
3
0.3
I
C
, COLLECTOR CURRENT (AMP)
5
7
10
Figure 1. Switching Times Test Circuit
Figure 2. Typical Switching Times
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2
MJF122, MJF127
T
A
T
C
4 80
PD, POWER DISSIPATION (WATTS)
3 60
T
C
2 40
1 20
T
A
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 3. Maximum Power Derating
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
t, TIME (ms)
100
200 300
500
1K
2K 3K
5K
10K
SINGLE PULSE
R
qJC(t)
= r(t) R
qJC
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 4. Thermal Response
10
IC, COLLECTOR CURRENT (AMPS)
100
ms
5
3
2
1
0.5
0.3
0.2
0.1
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
T
C
= 25°C (SINGLE PULSE)
1
5
20 30
2
3
10
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
T
J
= 150°C
d
c
5 ms
1 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
Figure 5. Maximum Forward Bias
Safe Operating Area
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3
MJF122, MJF127
10,000
hfe , SMALL-SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
2
T
C
= 25°C
V
CE
= 4 Vdc
I
C
= 3 Adc
300
T
J
= 25°C
200
C, CAPACITANCE (pF)
C
ob
100
70
50
PNP
NPN
5
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
30
0.1
0.2
PNP
NPN
0.5
1
2
5
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
C
ib
Figure 6. Typical Small−Signal Current Gain
Figure 7. Typical Capacitance
NPN
MJF122
20,000
V
CE
= 4 V
10,000
hFE , DC CURRENT GAIN
5000
3000
2000
25°C
1000
500
300
200
- 55°C
T
J
= 150°C
10,000
hFE , DC CURRENT GAIN
7000
5000
3000
2000
1000
700
500
20,000
PNP
MJF127
V
CE
= 4 V
T
J
= 150°C
25°C
- 55°C
0.1
0.2
0.3
0.5 0.7
1
2
3
5
7
10
300
200
0.1
0.2
0.3
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 8. Typical DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
T
J
= 25°C
2.6
I
C
= 2 A
2.2
4A
6A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
T
J
= 25°C
2.6
I
C
= 2 A
2.2
4A
6A
1.8
1.8
1.4
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20
30
I
B
, BASE CURRENT (mA)
1
0.3
0.5 0.7
1
2
3
5
7
10
20
30
I
B
, BASE CURRENT (mA)
Figure 9. Typical Collector Saturation Region
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4
MJF122, MJF127
NPN
MJF122
3
T
J
= 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
3
T
J
= 25°C
PNP
MJF127
2
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 4 V
1
0.5
0.1
V
CE(sat)
@ I
C
/I
B
= 250
2
1.5
1.5
V
BE
@ V
CE
= 4 V
V
BE(sat)
@ I
C
/I
B
= 250
1
0.5
V
CE(sat)
@ I
C
/I
B
= 250
0.1
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.2 0.3
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. Typical “On” Voltages
+5
+4
+3
+2
+1
0
-1
-2
-3
-4
-5
0.1
25°C to 150°C
- 55°C to 25°C
q
VB
FOR V
BE
0.2 0.3
0.5
0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
*q
VC
FOR V
CE(sat)
*I
C
/I
B
≤
h
FE 3
25°C to 150°C
- 55°C to 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
θ
V, TEMPERATURE COEFFICIENT (mV
°
C)
+5
+4
+3
+2
+1
0
-1
-2
-3
-4
-5
0.1
q
VB
FOR V
BE
- 55°C to 25°C
25°C to 150°C
5
7
10
*q
VC
FOR V
CE(sat)
- 55°C to 25°C
*I
C
/I
B
≤
h
FE 3
25°C to 150°C
0.2 0.3
0.5
1
2 3
I
C
, COLLECTOR CURRENT (AMP)
Figure 11. Typical Temperature Coefficients
10
5
REVERSE
IC, COLLECTOR CURRENT (
μ
A)
10
4
V
CE
= 30 V
10
3
10
2
T
J
= 150°C
10
1
10
0
100°C
FORWARD
IC, COLLECTOR CURRENT (
μ
A)
10
5
REVERSE
10
4
V
CE
= 30 V
10
3
10
2
10
1
10
0
10
-1
25°C
+ 0.6 + 0.4 + 0.2
0
- 0.2 - 0.4 - 0.6 - 0.8
-1
- 1.2 - 1.4
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
T
J
= 150°C
100°C
FORWARD
25°C
10
-1
- 0.6 - 0.4 - 0.2
0
+ 0.2
+ 0.4 + 0.6 + 0.8
+1
+ 1.2 + 1.4
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Typical Collector Cut−Off Region
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