NXP Semiconductors
Technical Data
Document Number: MRF6V2010N
Rev. 6, 9/2016
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW performance at 220 MHz: V
DD
= 50 Vdc, I
DQ
= 30 mA,
P
out
= 10 W
Power gain — 23.9 dB
Drain efficiency — 62%
Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
output power
Features
Characterized with series equivalent large--signal impedance parameters
Qualified up to a maximum of 50 V
DD
operation
Integrated ESD protection
225C capable plastic package
MRF6V2010N
MRF6V2010NB
MRF6V2010GN
10-
-450 MHz, 10 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
TO-
-270-
-2
PLASTIC
MRF6V2010N
TO-
-272-
-2
PLASTIC
MRF6V2010NB
TO-
-270G-
-2
PLASTIC
MRF6V2010GN
Gate 2
1 Drain
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
2007–2008, 2010, 2016 NXP B.V.
MRF6V2010N MRF6V2010NB MRF6V2010GN
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--0.5, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81C, 10 W CW
Symbol
R
JC
Value
(2,3)
3.0
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 5 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 28
Adc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 30 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 70 mAdc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.13
7.3
16.3
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
1.5
—
1.68
2.68
0.26
3
3.5
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
50
2.5
Adc
Vdc
Adc
mA
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at
http://www.nxp.com/RF/calculators.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
(continued)
MRF6V2010N MRF6V2010NB MRF6V2010GN
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Power Gain
Drain Efficiency
Input Return Loss
Symbol
G
ps
D
IRL
Min
22.5
58
—
Typ
23.9
62
--14
Max
25.5
—
--9
Unit
dB
%
dB
Functional Tests
(In NXP Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 30 mA, P
out
= 10 W, f = 220 MHz, CW
Table 6. Ordering Information
Device
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010GNR1
Tape and Reel Information
R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel
TO--270--2
TO--272--2
TO--270G--2
Package
ATTENTION: The MRF6V2010N, MRF6V2010NB and MRF6V2010GN are high power devices and special
considerations must be followed in board design and mounting. Incorrect mounting can lead to internal
temperatures which exceed the maximum allowable operating junction temperature. Refer to NXP Application
Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING
SYSTEM DESIGN
to ensure proper mounting of these devices.
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
3
L2
B1
V
BIAS
+
C2
+
C3
C4
C5
C6
C7
C8
L3
R1
RF
INPUT
Z1
C1
Z2
Z3
L1
Z4
C9
DUT
C10
C17
Z5
Z6
Z7
Z8
Z9
Z10
C18
Z11
RF
OUTPUT
C11
C12
C13 C14
B2
+
C15
C16
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
0.235 x 0.082 Microstrip
1.190 x 0.082 Microstrip
0.619 x 0.082 Microstrip
0.190 x 0.270 Microstrip
0.293 x 0.270 Microstrip
0.120 x 0.270 Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.062 x 0.270 Microstrip
0.198 x 0.082 Microstrip
5.600 x 0.082 Microstrip
0.442 x 0.082 Microstrip
0.341 x 0.082 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030,
r
= 2.55
Figure 2. MRF6V2010N(NB) Test Circuit Schematic
Table 7. MRF6V2010N(NB) Test Circuit Component Designations and Values
Part
B1, B2
C1, C8, C11, C18
C2
C3
C4, C13
C5, C14
C6, C15
C7, C12
C9
C10
C16
C17
L1
L2, L3
R1
Description
95
,
100 MHz Long Ferrite Beads
1000 pF Chip Capacitors
10
F,
35 V Tantalum Capacitor
22
F,
35 V Tantalum Capacitor
39 K pF Chip Capacitors
22 K pF Chip Capacitors
0.1
F
Chip Capacitors
2.2
F,
50 V Chip Capacitors
0.6--4.5 pF Variable Capacitor, Gigatrim
12 pF Chip Capacitor
470
F,
63 V Electrolytic Capacitor
27 pF Chip Capacitor
17.5 nH Inductor
82 nH Inductors
120
,
1/4 W Chip Resistor
Part Number
2743021447
ATC100B102JT50XT
T491D106K035AT
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ATC200B393KT50XT
ATC200B223KT50XT
CDR33BX104AKYS
C1825C225J5RAC
27271SL
ATC100B120JT500XT
ESMG630ELL471MK205
ATC100B270JT500XT
B06T
1812SMS--82NJ
CRCW1206120RFKEA
Manufacturer
Fair--Rite
ATC
Kemet
Kemet
ATC
ATC
Kemet
Kemet
Johanson
ATC
United Chemi--Con
ATC
CoilCraft
CoilCraft
Vishay
MRF6V2010N MRF6V2010NB MRF6V2010GN
4
RF Device Data
NXP Semiconductors
C5
C4
B1
C7
C2
C3
R1
L1
C8
CUT OUT AREA
C12
C11
C6
C14
C13
L2
C15
B2
C16
L3
C10
C17
C18
C1
C9
MRF6V2010N/NB
Rev. 3
Figure 3. MRF6V2010N(NB) Test Circuit Component Layout
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
5
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