STPS1170
Power Schottky rectifier
Datasheet
−
production data
Description
The STPS1170 is a 170 V Schottky rectifier suited
for switch mode power supplies and high
frequency DC to DC converters.
Packaged in SMAflat, this device is especially
intended for use in low voltage, high frequency
inverters, freewheeling and polarity protection.
Also ideal for all LED lighting applications where
efficiency and space constraint are required.
Table 1. Device summary
Features
•
Negligible switching losses
•
High junction temperature capability
•
Very small conduction losses
•
Low leakage current
•
Avalanche rated
•
ECOPACK
®
compliant component
•
T
j
= -40 °C minimum operating
Symbol
I
F(AV)
V
RRM
V
F
(typ)
T
j
(max)
Value
1A
170 V
0.62 V
175 °C
October 2014
This is information on a product in full production.
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8
Characteristics
STPS1170
1
Characteristics
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM(1)
T
stg
T
j
Parameter
Repetitive peak reverse voltage
Repetitive peak reverse voltage, T
j
= -40 °C
Forward rms current
Average forward current,
δ
= 0.5, square wave
Surge non repetitive forward current
SMAflat, T
L
= 160 °C
t
p
= 10 ms sinusoidal
Value
170
160
15
1
45
110
-65 to +175
-40 to +175
Unit
V
V
A
A
A
W
°C
°C
Repetitive peak avalanche power, square wave t
p
= 10 µs, T
j
= 125 °C
Storage temperature range
Operating junction temperature
(2)
1.
For pulse time duration deratings, please refer to
Figure 3.
More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible
avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche
specification”.
2.
dPtot
--------------
-
dTj
1
<
--------------------------
condition to avoid thermal runaway for a diode on its own heatsink
Rth
(
j
–
a
)
Table 3. Thermal parameters
Symbol
R
th(j-l)
Parameter
Junction to lead, SMAflat
Value
20
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
I
R(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
F(2)
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 380 µs,
δ
< 2%
V
R
= V
RRM
Min.
Typ.
Max.
1.5
0.25
1.5
0.82
I
F
= 1 A
0.62
0.67
V
0.89
I
F
= 2 A
0.69
0.75
Unit
µA
mA
To evaluate the conduction losses use the following equation:
P = 0.59 x I
F(AV)
+ 0.08 x I
F
2
(RMS)
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STPS1170
Characteristics
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (
δ
= 0.5)
Figure 3. Normalized avalanche power derating
versus pulse duration
(pulse > 10 µs, T
j
< 150 °C)
Figure 4. Relative variation of thermal
impedance junction to lead versus pulse
duration
Figure 5. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values)
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Characteristics
STPS1170
Figure 7. Forward voltage drop versus forward Figure 8. Forward voltage drop versus forward
current (typical values)
current (maximum values)
Figure 9. Thermal resistance junction to ambient versus copper surface under each lead (typical
values)
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STPS1170
Package information
2
Package information
•
•
•
Epoxy meets UL94,V0
Lead-free package
Band indicates cathode
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 10. SMAflat dimensions definitions
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