Darlington Transistors BIP PNP 8A 80V
| 参数名称 | 属性值 |
| Brand Name | ON Semiconductor |
| 是否无铅 | 不含铅 |
| 厂商名称 | ON Semiconductor(安森美) |
| 零件包装代码 | TO-220AB |
| 包装说明 | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 针数 | 3 |
| 制造商包装代码 | 221A-09 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 1 week |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 5 A |
| 集电极-发射极最大电压 | 80 V |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 1000 |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 65 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin (Sn) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 40 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| TIP126G | TIP127 | TIP122G | TIP125G | |
|---|---|---|---|---|
| 描述 | Darlington Transistors BIP PNP 8A 80V | Darlington Transistors 5A 100V Bipolar Power PNP | Darlington Transistors 5A 100V Bipolar Power NPN | Darlington Transistors 5A 60V Bipolar Power PNP |
| Brand Name | ON Semiconductor | - | ON Semiconductor | ON Semiconductor |
| 是否无铅 | 不含铅 | - | 不含铅 | 不含铅 |
| 零件包装代码 | TO-220AB | - | TO-220AB | TO-220AB |
| 包装说明 | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | - | 3 | 3 |
| 制造商包装代码 | 221A-09 | - | 221A-09 | 221A-09 |
| Reach Compliance Code | not_compliant | - | not_compliant | not_compliant |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 |
| Factory Lead Time | 1 week | - | 1 week | 2 weeks |
| 外壳连接 | COLLECTOR | - | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 5 A | - | 5 A | 5 A |
| 集电极-发射极最大电压 | 80 V | - | 100 V | 60 V |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | - | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 1000 | - | 1000 | 1000 |
| JEDEC-95代码 | TO-220AB | - | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e3 | - | e3 | e3 |
| 元件数量 | 1 | - | 1 | 1 |
| 端子数量 | 3 | - | 3 | 3 |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | 260 | - | 260 | 260 |
| 极性/信道类型 | PNP | - | NPN | PNP |
| 最大功率耗散 (Abs) | 65 W | - | 65 W | 65 W |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | NO | - | NO | NO |
| 端子面层 | Tin (Sn) | - | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed |
| 端子形式 | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | - | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 40 | - | 40 | 40 |
| 晶体管应用 | AMPLIFIER | - | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON |
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