Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
Package Thermal Characteristics
(Note 1)
μMAX
Junction-to-Ambient Thermal Resistance (θ
JA
) .......77.6°C/W
Junction-to-Case Thermal Resistance (θ
JC
) .................5°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics (±5V Supply)
(V
S+
= +5V, V
S
- = -5V, V
OCM
= 0V,
SHDN
= V
S+
, EP = 0V (Note 2), R
F
= R
G
= 1kΩ, R
L
= 1kΩ (between OUT+ and OUT-), T
A
= -40°C
to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 3)
PARAMETER
POWER SUPPLY
Supply Voltage Range
Quiescent Current
Power-Supply Rejection Ratio
V
S
I
S
PSRR
V
S
+ to V
S
-, guaranteed by PSRR
(EP = V
S
-)
No load, R
L
= ∞
SHDN
= 0V
V
S
+ to V
S
- = 2.7V to 13.2V
(EP = V
S
-
)
Guaranteed by CMRR
V
ICM
= (V
S
-) + 1.1V to (V
S
+) - 1.1V
90
2.7
3.7
6.8
123
13.2
6.8
20
V
mA
µA
dB
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DIFFERENTIAL PERFORMANCE—DC SPECIFICATIONS
Input Common-Mode Range
Input Common-Mode
Rejection Ratio
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Open-Loop Gain
Output Short-Circuit Current
Output Voltage Swing
V
ICM
CMRR
V
OS
TCV
OS
I
B
I
OS
A
VOL
I
SC
V
S
+ - V
OUT
Applies to V
OUT+
, V
OUT
V
OUT
- V
S
-
Applies to V
OUT+
, V
OUT-
V
OUT,DIFF
= 6.6V
P-P
, T
A
= +25°C
96
(V
S
-) + 1.1
94
130
±0.2
0.2
30
±15
130
60
0.98
0.92
1.15
1.10
750
±350
±1.5
(V
S
+) - 1.1
V
dB
mV
µV/°C
nA
nA
dB
mA
V
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Maxim Integrated
│
2
MAX44206
180MHz, Low-Noise, Low-Distortion, Fully
Differential Op Amp/ADC Driver
Electrical Characteristics (continued)
(V
S+
= +5V, V
S
- = -5V, V
OCM
= 0V,
SHDN
= V
S+
, EP = 0V (Note 2), R
F
= R
G
= 1kΩ, R
L
= 1kΩ (between OUT+ and OUT-), T
A
= -40°C
to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 3)
PARAMETER
Input Voltage-Noise Density
Input Voltage Noise
Input Current-Noise Density
1/f Noise Due to Input Current
-3dB Small-Signal Bandwidth
0.1dB Gain Flatness Bandwidth
-3dB Large-Signal Bandwidth
0.1dB Gain Flatness Bandwidth
Slew Rate (Differential)
Capacitive Loading
SR
C
L
i
N
SYMBOL
e
N
f = 1kHz
0.1Hz < f < 10Hz
f = 1kHz
0.1Hz < f < 10Hz
V
OUT,DIFF
= 0.1V
P-P
V
OUT,DIFF
= 0.1V
P-P
V
OUT,DIFF
= 2V
P-P
V
OUT,DIFF
= 2V
P-P
V
OUT,DIFF
= 2V
P-P
No sustained oscillations
V
OUT,DIFF
= 2V
P-P
, f = 10kHz
HD2/HD3 Specifications
V
OUT,DIFF
= 2V
P-P
, f = 1MHz
V
OUT,DIFF
= 6.6V
P-P
, f = 10kHz
V
OUT,DIFF
= 6.6V
P-P
, f = 1MHz
Settling Time
Output Impedance
Output Balance Error
SHDN
INPUT
Input Voltage
Input Current
Turn-On Time
Turn-Off Time
Input Voltage Range
Output Common-Mode Gain
Input Offset Voltage
Input Bias Current
Output Common-Mode
Rejection Ratio (Note 4)
-3dB Small-Signal Bandwidth
Slew Rate
OCMRR
2 x ∆(V
OS
,
)/∆(V
OCM
), V
OCM
= (V
S
-) + 1.2
to (V
S
+) - 1.2
V
OUT,CM
= 100mV
P-P
V
OUT,CM
= 1V
P-P
-2
100
G
OCM
V
IH
V
IL
I
IH
I
IL
t
ON
t
OFF
V
SHDN
= 2V
V
SHDN
= 0V
Output condition
Output condition
Guaranteed by gain parameter
∆(V
OUT,CM
)/∆(V
OCM
), V
OCM
= (V
S
-) + 1.2
to (V
S
+) - 1.2
(V
S
-) + 1.2
0.99
1
±13
-0.30
130
16
6
-1.5
0.2
-0.2
1.2
0.8
(V
S
+) - 1.2
1.01
±38
t
S
R
OUT,DIFF
Settling to 0.1%, V
OUT,DIFF
= 4V
P-P
Settling to 0.1%, V
OUT,DIFF
= 6.6V
P-P
f
C
= 1MHz
V
OUT,DIFF
= 1V
P-P
, f = 1MHz
1.25
0.65
1.5
CONDITIONS
MIN
TYP
3.1
200
1.5
220
180
25
38
19
180
5
-129/-146
-90/-98
-124/-142
-86/-90
58
107
0.1
-54
ns
Ω
dB
dBc
MAX
UNITS
nV/√Hz
nV
P-P
pA/√Hz
pA
P-P
MHz
MHz
MHz
MHz
V/µs
pF
DIFFERENTIAL PERFORMANCE—AC SPECIFICATIONS
V
µA
µs
µs
V
V/V
mV
µA
dB
MHz
V/µs
V
OCM
INPUT to V
OUT,CM
PERFORMANCE
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Maxim Integrated
│
3
MAX44206
180MHz, Low-Noise, Low-Distortion, Fully
Differential Op Amp/ADC Driver
Electrical Characteristics (+5V Supply)
(V
S+
= +5V, V
S
- = 0V, VOCM = 2.5V,
SHDN
= V
S+
, EP = 0V (Note 2), R
F
= R
G
= 1kΩ, R
L
= 1kΩ (between OUT+ and OUT-),
T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 3)
PARAMETER
POWER SUPPLY
Supply Voltage Range
Quiescent Current
V
S
I
S
V
S
+ to V
S
-, guaranteed by PSRR
(EP = V
S
-)
No load, R
L
= ∞
V
SHDN
= 0V
Guaranteed by CMRR
V
ICM
= (V
S
-) + 1.1V to (V
S
+) - 1.1V
(V
S
-) + 1.1
94
130
±0.2
0.2
30
±15
V
OUT,DIFF
= 2.8V
P-P
, T
A
= +25°C
95
120
60
0.95
0.85
3.1
200
1.5
220
180
25
38
19
120
5
-123/-143
-88.5/-95.5
58
100
0.1
-52
1.1
1.1
Applies to V
OUT+
, V
OUT
f = 1kHz
0.1Hz < f < 10Hz
i
N
f = 1kHz
0.1Hz < f < 10Hz
V
OUT,DIFF
= 0.1V
P-P
V
OUT,DIFF
= 0.1V
P-P
V
OUT,DIFF
= 2V
P-P
V
OUT,DIFF
= 2V
P-P
SR
C
L
V
OUT,DIFF
= 2V
P-P
No sustained oscillations
V
OUT
= 4V
P-P
, f = 10kHz
V
OUT
= 4V
P-P
, f = 1MHz
t
S
R
OUT,DIFF
Settling to 0.1%, V
OUT,DIFF
= 4V
P-P
Settling to 0.1%, V
OUT,DIFF
= 6.6V
P-P
f
C
= 1MHz (V
OUT,DIFF
)
V
OUT,DIFF
= 1V
P-P
, f = 1MHz
750
±350
±1.5
2.7
3.7
5.9
13.2
6.8
20
(V
S
+) - 1.1
V
mA
µA
V
dB
mV
µV/°C
nA
nA
dB
mA
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DIFFERENTIAL PERFORMANCE—DC SPECIFICATIONS
Input Common-Mode Range
Input Common-Mode
Rejection Ratio
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Open-Loop Gain
Output Short-Circuit Current
Output Voltage Swing
V
ICM
CMRR
V
OS
TC V
OS
I
B
I
OS
A
VOL
I
SC
V
S
+ - V
OUT
Applies to V
OUT+
, V
OUT
V
OUT
- V
S
-
e
N
DIFFERENTIAL PERFORMANCE—AC SPECIFICATIONS
Input Voltage-Noise Density
Input Voltage Noise
Input Current-Noise Density
1/f Noise Due to Input Current
-3dB Small-Signal Bandwidth
0.1dB Gain Flatness Bandwidth
-3dB Large-Signal Bandwidth
0.1dB Gain Flatness Bandwidth
Slew Rate (Differential)
Capacitive Loading
HD2/HD3 Specifications
Settling Time
Output Impedance
Output Balance Error
nV/√Hz
nV
P-P
pA/√Hz
pA
P-P
MHz
MHz
MHz
MHz
V/µs
pF
dBc
ns
Ω
dB
www.maximintegrated.com
Maxim Integrated
│
4
MAX44206
180MHz, Low-Noise, Low-Distortion, Fully
Differential Op Amp/ADC Driver
Electrical Characteristics (continued)
(V
S+
= +5V, V
S
- = 0V, VOCM = 2.5V,
SHDN
= V
S+
, EP = 0V (Note 2), R
F
= R
G
= 1kΩ, R
L
= 1kΩ (between OUT+ and OUT-),
T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 3)
SHDN
INPUT
Input Voltage
Input Current
Turn-On Time
Turn-Off Time
Input Voltage Range
Output Common-Mode Gain
Input Offset Voltage
Input Bias Current
Output Common-Mode
Rejection Ratio (Note 4)
-3dB Small-Signal Bandwidth
Slew Rate
OCMRR
2 x ∆(V
OS
,
)/∆(V
OCM
),
V
OCM
= (V
S
-) + 1.2 to (V
S
+) - 1.2
V
OUT,CM
= 100mV
P-P
V
OUT,CM
= 1V
P-P
-2
90
G
OCM
PARAMETER
SYMBOL
V
IH
V
IL
I
IH
I
IL
t
ON
t
OFF
V
SHDN
= 2V
V
SHDN
= 0V
Output condition
Output condition
Guaranteed by gain parameter
∆(V
OUT,CM
)/∆(V
OCM
), V
OCM
= (V
S
-) + 1.2
to (V
S
+) - 1.2
(V
S
-) +1.2
0.99
1
±13
-0.3
130
16
6
-1.5
0.2
-0.2
1.2
0.8
(V
S
+)-1.2
1.01
±38
CONDITIONS
MIN
1.25
0.65
1.5
TYP
MAX
UNITS
V
µA
µs
µs
V
V/V
mV
µA
dB
MHz
V/µs
VOCM INPUT to V
OUT,CM
PERFORMANCE
Note 2:
EP is the logic ground reference to the
SHDN
pin.
Note 3:
All devices are 100% production tested at T
A
= +25°C. Temperature limits are guaranteed by design.
Note 4:
OCMRR is mainly determined by external gain resistors matching. The formula used for OCMRR calculation assumes that
gain resistors are perfectly matched. Therefore, OCMRR = (1 + R
据外媒报道,萨里大学(University of Surrey)的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内,这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源: 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中,研究人员介绍了PEn...[详细]