
MOSFET MOSFT PCh -20V -3.6A 90mOhm 13nC Micro 8
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | Infineon(英飞凌) |
| 产品种类 Product Category | MOSFET |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | SMD/SMT |
| 封装 / 箱体 Package / Case | Micro-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | - 20 V |
| Id - Continuous Drain Current | - 3.6 A |
| Rds On - Drain-Source Resistance | 90 mOhms |
| Vgs - Gate-Source Voltage | 12 V |
| Qg - Gate Charge | 13 nC |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Pd-功率耗散 Pd - Power Dissipation | 1.8 W |
| Channel Mode | Enhancement |
| 系列 Packaging | Cut Tape |
| 系列 Packaging | Reel |
| 高度 Height | 1.11 mm |
| 长度 Length | 3 mm |
| Transistor Type | 1 P-Channel |
| 宽度 Width | 3 mm |
| Forward Transconductance - Min | 2.6 S |
| Fall Time | 38 ns |
| Moisture Sensitive | Yes |
| Rise Time | 53 ns |
| 工厂包装数量 Factory Pack Quantity | 4000 |
| Typical Turn-Off Delay Time | 31 ns |
| Typical Turn-On Delay Time | 17 ns |
| 单位重量 Unit Weight | 0.070548 oz |
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