STP30NF20
STW30NF20
N-channel 200V - 0.065Ω - 30A - TO-220/TO-247
Low gate charge STripFET™ Power MOSFET
General features
Type
STP30NF20
STW30NF20
■
■
■
■
■
V
DSS
200V
200V
R
DS(on)
0.075Ω
0.075Ω
I
D
30A
30A
P
TOT
125W
125W
3
2
1
Gate charge minimized
100% avalanche tested
Excellent figure of merit (R
DS
*Q
g
)
Very good manufactuing repeability
Very low intrinsic capacitances
TO-247
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
Applications
■
Switching application
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
so
schematic diagram
b
Internal
O
-
te
le
r
P
d
o
TO-220
uc
s)
t(
3
1
2
Order codes
Part number
STP30NF20
STW30NF20
Marking
30NF20
30NF20
Package
TO-220
TO-247
Packaging
Tube
Tube
November 2006
Rev 2
1/14
www.st.com
14
Contents
STP30NF20 - STW30NF20
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
2/14
STP30NF20 - STW30NF20
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D
I
D
I
DM(1)
P
TOT
dv/dt
(2)
T
J
T
stg
T
l
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Maximum lead temperature for soldering
purpose
Value
200
±20
30
19
120
125
1
Unit
V
V
A
A
1. Pulse width limited by safe operating area
2.
I
SD
≤
30A, di/dt
≤
200A/µs, V
DD
=80%V
(BR)DSS
Table 2.
Symbol
Thermal data
b
O
et
l
so
Table 3.
ro
P
e
R
thJA
I
AR
E
AS
R
thJC
Thermal resistance junction-case max
Thermal resistance junction-ambient max
62.5
uc
d
s)
t(
O
-
so
b
te
le
-55 to 150
300
r
P
10
d
o
uc
s)
t(
A
W
W/°C
V/ns
°C
°C
Parameter
TO-220
1
TO-247
Unit
°C/W
50
°C/W
Avalanche data
Parameter
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
AR
, V
DD
=50V)
Value
30
140
Unit
A
mJ
Symbol
3/14
Electrical characteristics
STP30NF20 - STW30NF20
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 1mA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating,Tc=125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 15A
Min.
200
1
10
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
bs
O
et
l
o
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
ro
P
e
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
uc
d
s)
t(
O
-
V
DS
=15V, I
D
= 15A
so
b
Test conditions
te
le
ro
P
Min.
2
uc
d
3
Typ.
20
1597
320
43
38
8
18
±
100
s)
t(
4
0.065 0.075
Max.
Unit
S
pF
pF
pF
nC
nC
nC
V
DS
=25V, f=1 MHz, V
GS
=0
V
DD
=160V, I
D
= 30A
V
GS
=10V
(see Figure 16)
4/14
STP30NF20 - STW30NF20
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Test conditions
V
DD
=100V, I
D
=15A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 15)
V
DD
=100V, I
D
=15A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 15)
Min.
Typ.
35
15.7
Max.
Unit
ns
ns
Turn-off delay time
Fall time
38
8.8
ns
ns
Table 7.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=30A, V
GS
=0
Test conditions
Min.
V
SD(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
I
SD
=30A, di/dt = 100A/µs,
V
DD
=100 V, Tj=25°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
155
0.96
12.4
194
1.42
14.6
Typ.
Max.
30
120
1.5
s)
t(
Unit
A
A
V
ns
µC
A
ns
µC
A
I
SD
=30A, di/dt = 100A/µs,
V
DD
=100 V, Tj=150°C
5/14
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