IS62WV25616DALL/DBLL, IS65WV25616DBLL
256K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC SRAM
FEATURES
•
High-speed access time: 35, 45, 55 ns
• CMOS low power operation
30 mW (typical) operating
6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
1.65V--2.2V V
dd
(IS62WV25616DALL)
2.3V--3.6V V
dd
(IS62/65WV25616DBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available
• 2 CS option available
MARCH
2015
are high-speed, low power, 4M bit SRAMs organized as
256K words by 16 bits. It is fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is
LOW
(deselcted) or when
CS1 is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable (WE)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62WV25616DALL and IS62/65WV25616DBLL are
packaged in the JEDEC standard
44-Pin TSOP (TYPE II)
and 48-pin mini BGA (6mmx8mm).
DESCRIPTION
The
ISSI
IS62WV25616DALL and IS62/65WV25616DBLL
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-
pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon
Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D1
3/10/2015
1
IS62WV25616DALL/DBLL, IS65WV25616DBLL
PIN CONFIGURATIONS
48- ball mini BGA (6mm x 8mm)
(Package Code B)
1
2
3
4
5
6
44-Pin mini TSOP (Type II)
(Package Code T)
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
VDD
I/O
14
I/O
15
NC
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CSI
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
NC
I/O
0
I/O
2
VDD
GND
I/O
6
I/O
7
NC
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A17
48-Pin mini BGA (6mm x 8mm)*
2 CS Option (Package Code B2)
1
2
3
4
5
6
PIN DESCRIPTIONS
A0-A17
I/O0-I/O15
CS1,
CS2
OE
WE
LB
UB
NC
V
dd
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
VDD
I/O
14
I/O
15
NC
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CS1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
CS2
I/O
0
I/O
2
VDD
GND
I/O
6
I/O
7
NC
*Available upon request
2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D1
3/10/2015
IS62WV25616DALL/DBLL, IS65WV25616DBLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE
X
X
X
H
H
H
H
H
L
L
L
CS1
H
X
X
L
L
L
L
L
L
L
L
CS2
X
L
X
H
H
H
H
H
H
H
H
OE
X
X
X
H
H
L
L
L
X
X
X
LB
X
X
H
L
X
L
H
L
L
H
L
UB
X
X
H
X
L
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
d
Out
High-Z
d
Out
d
in
High-Z
d
in
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
d
Out
d
Out
High-Z
d
in
d
in
V
DD
Current
i
sb
1
, i
sb
2
i
sb
1
, i
sb
2
i
sb
1
, i
sb
2
i
CC
i
CC
i
CC
i
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
V
dd
t
stg
P
t
Parameter
Terminal Voltage with Respect to GND
V
dd
Relates to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
dd
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
in
C
i/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
in
= 0V
V
Out
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
a
= 25°C,
f = 1 MHz, V
dd
= 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D1
3/10/2015
3
IS62WV25616DALL/DBLL, IS65WV25616DBLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 5%
Symbol
V
OH
V
OL
V
iH
V
iL
i
Li
i
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., i
OH
=
–1 mA
V
dd
=
Min., i
OL
=
2.1 mA
GND ≤
V
in
≤
V
dd
GND
≤
V
Out
≤
V
dd
,
Outputs Disabled
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1.
V
iL
(min.) = –0.3V
DC; V
iL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
iH
(max.) = V
dd
+
0.3V dC; V
iH
(max.) = V
dd
+
2.0V aC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.3V-3.6V
Symbol
V
OH
V
OL
V
iH
V
iL
i
Li
i
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., i
OH
=
–1.0 mA
V
dd
=
Min., i
OL
=
2.1 mA
GND ≤
V
in
≤
V
dd
GND
≤
V
Out
≤
V
dd
,
Outputs Disabled
Min.
1.8
—
2.0
–0.3
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1.
V
iL
(min.) = –0.3V
DC; V
iL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
iH
(max.) = V
dd
+
0.3V dC; V
iH
(max.) = V
dd
+
2.0V aC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 1.65V-2.2V
Symbol
V
OH
V
OL
V
iH
V
iL
(1)
i
Li
i
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
i
OH
=
-0.1 mA
i
OL
=
0.1 mA
V
DD
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
V
dd
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
GND ≤
V
in
≤
V
dd
GND
≤
V
Out
≤
V
dd
,
Outputs Disabled
Note:
1.
V
iL
(min.) = –0.3V
DC; V
iL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
iH
(max.) = V
dd
+
0.3V dC; V
iH
(max.) = V
dd
+
2.0V aC (pulse width < 10 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D1
3/10/2015
5
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