Advance Technical Information
Polar
TM
HiperFET
TM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
MMIX1F40N110P
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
1100V
24A
290mΩ
Ω
300ns
D
G
S
Maximum Ratings
1100
1100
±30
±40
24
100
20
2
15
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
V~
N/lb.
g
Isolated Tab
D
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
S
G
G = Gate
S = Source
Features
D = Drain
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
300
260
2500
50..200 / 11..45
8
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
-
Excellent Thermal Transfer
-
Increased Temperature and Power
Cycling Capability
-
High Isolation Voltage (2500V~)
Low
Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on)
and Q
G
Advantages
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 20A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1100
3.5
6.5
V
V
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Pulse Power Applications
Discharge Circuits in Lasers Pulsers,
Spark Igniters, RF Generators
DC-DC converters
DC-AC inverters
±200
nA
50
μA
3 mA
290 mΩ
© 2012 IXYS CORPORATION, All Rights Reserved
DS100431(01/12)
MMIX1F40N110P
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.05
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 20A
Gate Input Resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 20A
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 20A, Note 1
Characteristic Values
Min.
Typ.
Max.
20
32
19
1070
46
1.65
53
55
110
54
310
95
142
S
nF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.25
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 20A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
2.2
16.0
Characteristic Values
Min.
Typ.
Max.
40
160
1.5
A
A
V
300 ns
μC
A
Note
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
MMIX1F40N110P
Fig. 1. Output Characteristics @ T
J
= 25ºC
40
V
GS
= 10V
35
9V
30
60
70
80
V
GS
= 10V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
8V
I
D
- Amperes
25
50
40
30
20
9V
8V
7V
10
0
10
11
12
0
5
10
15
20
7V
25
30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
40
35
30
V
GS
= 10V
9V
3.2
Fig. 4. R
DS(on)
Normalized to I
D
= 20A Value vs.
Junction Temperature
V
GS
= 10V
2.8
R
DS(on)
- Normalized
2.4
I
D
= 40A
I
D
- Amperes
25
20
15
10
5
0
0
5
10
15
8V
2.0
I
D
= 20A
1.6
7V
1.2
0.8
6V
0.4
20
25
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 20A Value vs.
Drain Current
2.6
2.4
2.2
V
GS
= 10V
T
J
= 125ºC
28
Fig. 6. Maximum Drain Current vs.
Case Temperature
24
R
DS(on)
- Normalized
20
2.0
I
D
- Amperes
T
J
= 25ºC
1.8
1.6
1.4
16
12
8
1.2
1.0
0.8
0
10
20
30
40
50
60
70
80
4
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved
MMIX1F40N110P
Fig. 7. Input Admittance
45
40
50
35
60
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
30
40
I
D
- Amperes
25ºC
125ºC
25
T
J
= 125ºC
20
15
10
25ºC
- 40ºC
30
20
10
5
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
0
0
5
10
15
20
25
30
35
40
45
50
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
120
16
14
100
12
80
V
DS
= 550V
I
D
= 20A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
60
T
J
= 125ºC
40
T
J
= 25ºC
20
V
GS
- Volts
0.9
1.0
1.1
1.2
1.3
10
8
6
4
2
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0
50
100
150
200
250
300
350
400
450
500
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
Capacitance - PicoFarads
100
10,000
Ciss
I
D
- Amperes
10
100µs
1ms
1,000
Coss
1
10ms
100
0.1
100ms
DC
f
= 1 MHz
10
0
5
10
15
20
25
Crss
0.01
10
100
1,000
10,000
30
35
40
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1F40N110P
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
0.4
0.1
Z
(th)JC
- ºC / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_40N110P(97)12-15-11-A
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
