* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72145
S-71660-Rev. C, 06-Aug-07
www.vishay.com
1
SUD23N06-31L
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 10 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
I
F
= 15 A, V
GS
= 0 V
I
F
= 15 A, di/dt = 100 A/µs
1.0
30
V
DD
= 30 V, R
L
= 1.3
Ω
I
D
≅
23 A, V
GEN
= 10 V, R
g
= 2.5
Ω
V
DS
= 30 V, V
GS
= 10 V, I
D
= 23 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
670
140
60
11
3
3
8
15
30
25
15
25
45
40
50
1.5
60
A
V
ns
ns
17
nC
pF
g
fs
V
DS
= 15 V, I
D
= 15 A
0.037
20
50
0.025
0.031
0.055
0.069
0.045
S
Ω
60
1.0
2.0
3.0
± 100
1
50
250
A
µA
V
nA
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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