PD - 96334
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low V
CE(on)
Non Punch Through IGBT Technology
• 10µs Short Circuit Capability
• Square RBSOA
• Positive V
CE(on)
Temperature Coefficient
• Maximum Junction Temperature rated at 175°C
• Lead-Free,
RoHS Compliant
• Automotive Qualified *
G
AUIRGS30B60K
AUIRGSL30B60K
C
V
CES
= 600V
I
C
= 50A, T
C
=100°C
at T
J
=175°C
t
sc
> 10µs, T
J
=150°C
E
n-channel
V
CE(on)
typ. = 1.95V
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
D
2
Pak
AUIRGS30B60K
TO-262
AUIRGSL30B60K
Absolute Maximum Ratings
G
Gate
C
Collector
E
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise
specified
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
ISOL
V
GE
P
D
@ T
C
= 25°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
78
50
Units
V
A
120
120
2500
±20
370
180
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
W
V
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
P
D
@ T
C
= 100°C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Weight
Junction-to-Ambient (PCB Mount, Steady State)
Min.
–––
–––
–––
–––
Typ.
–––
0.50
–––
1.44
Max.
0.41*
–––
40
–––
Units
°C/W
g
dÃÃ
* R
θJC
(end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
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1
10/14/10
AUIRGS/SL30B60K
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
Min. Typ. Max. Units
600
—
—
—
—
3.5
—
—
—
—
—
—
Conditions
Ref.Fig.
V
GE(th)
∆V
GE(th)
/∆T
J
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
—
—
V V
GE
= 0V, I
C
= 500µA
0.40
— V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
1.95 2.35
2.40 2.75
V I
C
= 30A, V
GE
= 15V, T
J
= 150°C
I
C
= 30A, V
GE
= 15V, T
J
= 175°C
2.6 2.95
4.5
5.5
V V
CE
= V
GE
, I
C
= 250µA
-10
— mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-150°C)
18
—
S V
CE
= 50V, I
C
= 50A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
5.0
250
1000 2000 µA V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
1830 3000
—
±100 nA V
GE
= ±20V, V
CE
= 0V
5,6,7
8,9,10
8,9,10
11
Static or Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
L
E
C
ies
C
oes
C
res
RBSOA
SCSOA
I
SC
(Peak)
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
Min. Typ. Max. Units
—
102 153
—
14
21
—
44
66
—
350 620
—
825 955
—
1175 1575
—
46
60
—
28
39
—
185 200
—
31
40
—
635 1085
—
1150 1350
—
1785 2435
—
46
60
—
28
39
—
205 235
—
32
42
—
7.5
—
—
1750
—
—
160
—
—
60
—
FULL SQUARE
10
—
—
200
—
—
Conditions
Ref.Fig.
I
C
= 30A
nC V
CC
= 400V
V
GE
= 15V
I
C
= 30A, V
CC
= 400V
µJ V
GE
= 15V, R
G
= 10Ω, L = 200µH
T
J
= 25°C
I
C
= 30A, V
CC
= 400V
ns V
GE
= 15V, R
G
= 10Ω, L = 200µH
T
J
= 25°C
17
CT1
CT4
e
CT4
µJ
ns
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω, L = 200µH
T
J
= 150°C
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω, L = 200µH
T
J
= 150°C
CT4
12,14
WF1,WF2
13,15
CT4
WF1
WF2
e
nH Measured 5mm from package
V
GE
= 0V
pF V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 120A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
=10
Ω
16
4
CT2
CT3
WF3
WF3
µs
A
T
J
= 150°C, Vp = 600V, R
G
= 10Ω
V
CC
=360V,V
GE
= +15V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 28µH, R
G
= 22Ω.
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
2
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AUIRGS/SL30B60K
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
D PAK
2
MSL1
N/A
Class M4 (400V)
AEC-Q101-002
†††
Moisture Sensitivity Level
TO-262
Machine Model
Human Body Model
Charged Device Model
RoHS Compliant
†
(per IPC/JEDEC J-STD-020)
ESD
Class H2 (4000V)
AEC-Q101-001
Class C4 (1000V)
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Higher MSL ratings may be available for the specific package types listed here. Please
contact your International Rectifier sales representative for further information.
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3
AUIRGS/SL30B60K
80
400
70
350
60
300
50
IC (A)
250
Ptot (W)
40
30
20
200
150
100
10
50
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
1000
100
10 µs
100
IC (A)
10
100 µs
1
1ms
DC
0.1
1
10
100
VCE (V)
1000
10000
IC A)
10
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
150°C
4
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
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AUIRGS/SL30B60K
60
50
40
ICE (A)
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
ICE (A)
50
40
30
20
10
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 8.0V
30
20
10
0
0
1
2
3
VCE (V)
4
5
0
1
2
3
VCE (V)
4
5
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
60
50
40
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
30
20
10
0
0
1
2
3
VCE (V)
4
5
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80µs
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