IRFP17N50L, SiHFP17N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
130
33
59
Single
D
FEATURES
500
0.28
• SuperFast Body Diode Eliminates the Need
For External Diodes in ZVS Applications
• Low Gate Charge Results in Simple Drive
Requirement
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
Available
RoHS*
COMPLIANT
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
G
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supply
S
N-Channel MOSFET
S
D
G
• Motor Control applications
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFP17N50LPbF
SiHFP17N50L-E3
IRFP17N50L
SiHFP17N50L
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
16
11
64
1.8
390
16
22
220
13
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 3.0 mH, R
g
= 25
Ω,
I
AS
= 16 A (see fig. 12).
c. I
SD
≤
16 A, dI/dt
≤
347 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
0.56
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Internal Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A,
dI/dt = 100 A/μs
b
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
C
oss
eff. (ER)
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
d
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 9.9 A
b
A
b
V
DS
= 50 V, I
D
= 9.9
500
-
3.0
-
-
-
-
11
-
-
-
-
-
-
-
0.60
-
-
-
-
0.28
-
2760
325
37
3690
84
159
120
1.4
-
-
-
21
51
50
28
-
-
5.0
± 100
50
2.0
0.32
-
-
-
-
-
-
-
-
-
130
33
59
-
-
-
-
V
V/°C
V
nA
μA
mA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V , f = 1.0 MHz
V
DS
= 400 V , f = 1.0 MHz
V
GS
= 0 V
V
DS
= 0 V to 400 V
f = 1 MHz, open drain
V
GS
= 10 V
I
D
= 16 A, V
DS
= 400 V
see fig. 7 and 15
b
pF
-
-
-
-
-
-
-
-
-
Ω
nC
V
DD
= 250 V, I
D
= 16 A
R
G
= 7.5
Ω,
V
GS
= 10 V
see fig. 14a and 14b
b
ns
-
-
-
-
-
170
220
470
810
7.3
16
A
64
1.5
250
330
710
1210
11
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 16 A, V
GS
= 0
V
b
-
-
-
-
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Forward Turn-On Time
t
on
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 μs; duty cycle
≤
2 %.
c. C
OSS
eff. is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising fom 0 % to 80 % V
DS
.
C
OSS
eff. (ER) is a fixed capacitance that stores the same energy as C
OSS
while V
DS
is rising fom 0 % to 80 % V
DS
.
www.vishay.com
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Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
ID, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
10
T
J
= 25
°
C
1
5.0V
0.1
1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
VDS, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
ID, Drain-to-Source Current (A)
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
3.0
I
D
= 16A
2.5
2.0
5.0V
1.5
1
1.0
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.5
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
100000
20
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
16A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
16
10000
C, Capacitance(pF)
Ciss
1000
12
8
Coss
100
4
Crss
10
1
10
100
1000
0
0
30
60
90
120
150
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
20
100
I
SD
, Reverse Drain Current (A)
15
T
J
= 150
°
C
10
Energy (µJ)
10
T
J
= 25
°
C
1
5
0
0
100
200
300
400
500
600
0.1
0.2
0.6
0.9
V
GS
= 0 V
1.3
1.6
VDS, Drain-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typ. Output Capacitance Stored Energy vs. V
DS
www.vishay.com
4
Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
R
D
V
DS
20
V
GS
R
G
D.U.T.
+
-
V
DD
16
I
D
, Drain Current (A)
10 V
12
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
8
4
V
DS
90 %
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
Thermal Response(Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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