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IS42VM16400M-6BLI-TR: 产品描述DRAM 64M, 1.8V, M-SDRAM 2Mx32, 133Mhz, RoHS; 产品类别存储; 文件大小696KB，共34页; 制造商ISSI(芯成半导体); 官网地址http://www.issi.com/; 标准

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IS42VM16400M-6BLI-TR在线购买

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DRAM 64M, 1.8V, M-SDRAM 2Mx32, 133Mhz, RoHS

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)
产品种类 Product Category	DRAM
RoHS	Details
类型 Type	SDRAM Mobile
系列 Packaging	Reel
Moisture Sensitive	Yes
工厂包装数量 Factory Pack Quantity	2500

	IS42VM16400M-6BLI-TR	IS42VM16400M-75BLI	IS42SM16400M-75BLI	IS42SM16400M-6BLI-TR	IS42VM16400M-6BLI	IS42SM16400M-75BLI-TR
描述	DRAM 64M, 1.8V, M-SDRAM 2Mx32, 133Mhz, RoHS	DRAM 64M, 1.8V, M-SDRAM 4Mx16, 133Mhz, RoHS	DRAM 64M, 3.3V, M-SDRAM 2Mx32, 133Mhz, RoHS	DRAM 64M, 3.3V, M-SDRAM 2Mx32, 133Mhz, RoHS	DRAM 64M, 1.8V, M-SDRAM 4Mx16, 166Mhz, RoHS	DRAM 64M, 3.3V, M-SDRAM 2Mx32, 133Mhz, RoHS
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)
产品种类 Product Category	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM
RoHS	Details	Details	Details	Details	Details	Details
类型 Type	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile
Moisture Sensitive	Yes	Yes	Yes	Yes	Yes	Yes
工厂包装数量 Factory Pack Quantity	2500	348	348	2500	348	2500

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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