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MMBZ5235BLT1G

产品描述Zener Diodes 6.8V 225mW
产品类别分立半导体    二极管   
文件大小104KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MMBZ5235BLT1G概述

Zener Diodes 6.8V 225mW

MMBZ5235BLT1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
零件包装代码SOT-23
包装说明R-PDSO-G3
针数3
制造商包装代码318-08
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗5 Ω
JEDEC-95代码TO-236AB
JESD-30 代码R-PDSO-G3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散0.225 W
认证状态Not Qualified
标称参考电压6.8 V
表面贴装YES
技术ZENER
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间40
最大电压容差5%
工作测试电流20 mA
Base Number Matches1

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MMBZ52xxBLT1G Series,
SZMMBZ52xxBLT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
www.onsemi.com
225 mW Rating on FR−4 or FR−5 Board
Zener Voltage Range − 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 KV) per Human Body Model
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
xxx
G
G
M
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Total Power Dissipation on FR−5 Board,
(Note 1) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−65 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Units
xxx
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMBZ52xxBLT1G
Package
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
SZMMBZ52xxBLT1G SOT−23
(Pb−Free)
MMBZ52xxBLT3G
SOT−23
(Pb−Free)
SZMMBZ52xxBLT3G SOT−23
(Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2001
1
October, 2016 − Rev. 13
Publication Order Number:
MMBZ5221BLT1/D

 
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