STD46P4LLF6
P-channel 40 V, 0.0125 Ω typ., StripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Figure 1: Internal schematic diagram
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits the lowest R
DS(on)
in all
packages.
Table 1: Device summary
Order codes
Marking
46P4LLF6
Package Packaging
DPAK
Tape and
reel
D(2, TAB)
G(1)
STD46P4LLF6
S(3)
AM11258v1
For the P-channel Power MOSFETs the
actual polarity of the voltages and the
current must be reversed.
Features
Order codes
STD46P4LLF6
V
DSS
40 V
R
DS(on)
max.
0.015 Ω
I
D
46 A
December 2014
DocID025772 Rev 3
1/16
www.st.com
This is information on a product in full production.
Contents
STD46P4LLF6
Contents
1
2
3
4
5
6
7
Electrical ratings ............................................................................. 3
Electrical characteristics ................................................................ 4
Electrical characteristics (curves).................................................. 6
Test circuits ..................................................................................... 8
Package mechanical data ............................................................... 9
5.1
DPAK (TO-252) rev. Q type A mechanical data .............................. 10
Packaging mechanical data .......................................................... 13
Revision history ............................................................................ 15
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STD46P4LLF6
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
I
D
I
DM
(1)
(1)
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature
Max. operating junction temperature
Value
40
±20
46
32.5
184
70
-55 to 175
175
Unit
V
V
A
A
A
W
°C
°C
P
TOT
T
j
T
stg
Notes:
(1)
Pulse width limited by safe operating area
Table 3: Thermal data
Symbol
R
thj-case
Parameter
Thermal resistance junction-case max.
Value
2.14
Unit
°C/W
For the P-channel Power MOSFETs the actual polarity of the voltages and the
current must be reversed.
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Electrical characteristics
STD46P4LLF6
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4: Static
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
breakdown Voltage
Zero gate voltage
drain current
Gate body leakage
current
Gate threshold
voltage
Static drain-source
on-resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= 40 V, (V
GS
= 0)
V
DS
= 40 V, Tc = 125 °C
V
GS
= ± 20 V, (V
DS
= 0)
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 23 A
V
GS
= 4.5 V, I
D
=23 A
Table 5: Dynamic
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 20 V, I
D
= 46 A
V
GS
= 4.5 V
V
DS
= 25 V, f=1 MHz,
V
GS
= 0
Test conditions
Min.
-
-
-
-
-
-
Typ.
3525
344
238.5
34
11.3
13.8
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
1
0.0125
0.017
Min.
40
1
10
±100
2.5
0.015
0.02
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
For the P-channel Power MOSFETs the actual polarity of the voltages and the
current must be reversed.
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DocID025772 Rev 3
STD46P4LLF6
Electrical characteristics
Table 6: Switching on/off (inductive load)
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
-
Typ.
49.4
60.6
170
20
Max.
-
-
-
-
Unit
ns
ns
ns
ns
V
DD
= 20 V, I
D
= 23 A,
R
G
= 4.7 Ω, V
GS
= 10 V
-
-
-
Table 7: Source-drain diode
Symbol
V
SD
t
rr
Q
rr
I
RRM
Notes:
(1)
(1)
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
Test conditions
I
SD
= 23 A, V
GS
= 0
I
SD
= 46 A,
di/dt = 100 A/µs,
V
DD
= 24 V
Min.
-
-
-
-
Typ.
Max.
1.1
Unit
V
ns
nC
A
29
27.6
1.9
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFETs the actual polarity of the voltages and the
current must be reversed.
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