STTH5R06DJF
Ultrafast recovery diode high efficiency
Datasheet
−
production data
Features
A(1)
■
■
■
■
■
■
■
Suited for DC/DC converts
Low losses
High T
J
High surge current capability
High energy avalanche capability
1 mm package thickness
ECOPACK
®
2 compliant component
A(2)
A(2)
A(1)
A(1)
K
K
A(2)
K
Description
High performance diode suited for high frequency
DC to DC converters. Packaged in PowerFLAT™
5x6, this device is intended for use in low voltage
high frequency inverters.
PowerFLAT 5x6
STTH5R06DJF
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr
(typ)
Value
5A
600 V
175 °C
0.95 V
30 ns
TM: PowerFLAT is a trademark of STMicroelectronics
March 2012
This is information on a product in full production.
Doc ID 022760 Rev 1
1/9
www.st.com
9
Characteristics
STTH5R06DJF
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Absolute ratings (limiting values with anode terminals short-circuited)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
T
c
= 160 °C
δ
= 0.5
t
p
= 10 ms
sinusoidal
Value
600
45
5
190
-65 to + 175
175
Unit
V
A
A
A
°C
°C
Table 3.
Symbol
R
th(j-c)
Thermal parameter
Parameter
Junction to case
Maximum
2.0
Unit
°C/W
Table 4.
Symbol
I
R(1)
V
F(2)
Static electrical characteristics (anode terminals short-circuited)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
Forward voltage drop
T
j
= 25 °C
T
j
= 125 °C
V
R
= 600V
Min.
Typ
Max.
60
µA
60
1.55
I
F
= 5 A
0.95
600
2.00
V
1.20
Unit
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 380 µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.9 x I
F(AV)
+ 0.06 I
F2(RMS)
2/9
Doc ID 022760 Rev 1
STTH5R06DJF
Table 5.
Symbol
Characteristics
Recovery characteristics
Parameter
Test conditions
I
F
= 1 A
V
r
= 30 V
dI
F
/dt = - 100 A/µs
I
F
= 1 A
V
r
= 30 V
dI
F
/dt = - 50 A/µs
I
F
= 5 A,
dI
F
/dt = - 200 A/µs,
V
R
= 400 V
Min.
Typ
Max.
Unit
30
40
ns
t
rr
Reverse recovery time
T
j
= 25 °C
40
6.0
55
8.0
A
-
nC
I
RM
S
factor
Q
rr
Reverse recovery current
Reverse recovery
softness factor
Reverse recovery charges
T
j
= 125 °C
0.5
180
Table 6.
Symbol
t
fr
V
FP
Turn-on switching characteristics
Parameter
Forward recovery time
Forward recovery voltage
T
j
= 25 °C
Test conditions
I
F
= 5 A
dI
F
/dt = - 100 A/µs
V
FR
= 1.6 V
Min.
Typ
Max.
150
2.3
3.5
Unit
ns
V
Figure 1.
PF(AV)(W)
Average forward power dissipation Figure 2.
versus average forward current
IFM(A)
Forward voltage drop versus
forward current
T
j
=125 °C
(Typical values)
9
8
7
6
5
4
3
2
1
0
100.0
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
δ
=1
T
j
=125 °C
(Maximum values)
10.0
T
j
=25 °C
(Maximum values)
1.0
T
IF(AV)(A)
δ
=tp/T
4
5
6
tp
VFM(V)
0.1
0
1
2
3
7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Doc ID 022760 Rev 1
3/9
Characteristics
STTH5R06DJF
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
IRM(A)
Peak reverse recovery current
versus dI
F
/dt (typical values)
Zth(j-c)/Rth(j-c)
1.0
0.9
12
I
F
=I
F(AV)
V
R
=400 V
T
j
=125 °C
10
0.8
0.7
0.6
0.5
0.4
4
6
8
0.3
0.2
0.1
0.0
1.E-04
Single pulse
tP(S)
2
dIF/dt(A/µs)
0
1.E-03
1.E-02
1.E-01
1.E+00
0
50
100
150
200
250
300
350
400
450
500
Figure 5.
TRR(ns)
Reverse recovery time versus dI
F
/dt Figure 6.
(typical values)
280
I
F
=I
F(AV)
V
R
=400 V
T
j
=125 °C
Reverse recovery charges versus
dI
F
/dt (typical values)
140
120
100
80
60
40
20
QRR(nC)
I
F
=I
F(AV)
V
R
=400 V
T
j
=125 °C
240
200
160
120
80
40
dIF/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0
0
50
100
150
200
250
300
350
400
dIF/dt(A/µs)
450
500
Figure 7.
Softness factor versus dI
F
/dt
(typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
S
FACTOR
I
F
=I
F(AV)
V
R
=400 V
Reference: T
j
=125 °C
SFACTOR
1.0
I
F
=I
F(AV)
V
R
=400 V
T
j
=125 °C
2.50
2.25
2.00
1.75
0.8
0.6
1.50
1.25
0.4
1.00
0.75
I
RM
0.2
0.50
dIF/dt(A/µs)
0.0
0
50
100
150
200
250
300
350
400
450
500
0.25
0.00
25
Q
RR
T
j
(°C)
75
100
125
50
4/9
Doc ID 022760 Rev 1
STTH5R06DJF
Characteristics
Figure 9.
V
FP
(V)
I
F
=I
F(AV)
T
j
=125 °C
Transient peak forward voltage
versus dI
F
/dt (typical values)
Figure 10. Forward recovery time versus dI
F
/dt
(typical values)
t
FR
(ns)
110
100
90
80
I
F
=I
F(AV)
V
FR
=1.6V
T
j
=125 °C
6
5
4
70
60
50
3
2
40
30
1
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
20
10
0
50
100
150
200
250
300
350
400
450
500
dI
F
/dt(A/µs)
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab
Rth(j-a)(°C/W)
250
epoxy printed circuit board Fr4
copper thickness = 35 µm
PowerFLAT 5x6
200
150
100
100
50
V
R
(V)
10
1
10
100
1000
0
0
1
2
3
4
5
6
7
Scu(cm2)
8
9
10
Doc ID 022760 Rev 1
5/9
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
