DATASHEET
IS-139ASRH, IS-139ASEH
Single Event Radiation Hardened Quad Voltage Comparators
The single event effects and total dose radiation hardened
IS-139ASRH, IS-139ASEH consist of four independent single or
dual supply voltage comparators on a single monolithic
substrate. The common mode input voltage range includes
ground, even when operated from a single supply, and the low
supply current makes these comparators suitable for low
power applications. These types were designed to directly
interface with TTL and CMOS inputs.
The IS-139ASRH, IS-139ASEH are fabricated on our
dielectrically isolated Rad Hard Silicon Gate (RSG) process,
which provides immunity to single event latch-up and the
capability of highly reliable performance in any radiation
environment.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the IS-139ASRH,
IS-139ASEH are contained in
SMD 5962-01510.
FN9000
Rev 4.00
April 6, 2012
Features
• Electrically Screened to SMD # 5962-01510
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Hardness
- Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . 300krad(Si) (Max)
- Single Event Latch-up . . . . . . . . . . . . . . . >84MeV/mg/cm
2
- Single Event Upset . . . . . . . . . . . . . . . . . . >84MeV/mg/cm
2
• Operating Supply Voltage Range . . . . . . . . . . . . . . . 9V to 30V
• Input Offset Voltage (V
IO
) . . . . . . . . . . . . . . . . . . . . 5mV (Max)
• Quiescent Supply Current . . . . . . . . . . . . . . . . . . . . 3mA (Max)
• Differential Input Voltage Range Equal to the Supply Voltage
Applications
• DC-DC Power Conversion
• Pulse Generators
• Timing Circuitry
• Level Shifting
• Analog to Digital Conversion
Pin Configuration
IS9-139ASRH,
IS9-139ASEH
(FLATPACK CDFP4-F20)
TOP VIEW
NC
OUTB
NC
OUTA
NC
NC
VCC
-INA
+INA
-INB
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
OUTC
OUTD
NC
GND
NC
+IND
-IND
+INC
-INC
+INB
Ordering Information
ORDERING
NUMBER
5962F0151001VXC
5962F0151001QXC
5962F0151002VXC
IS9-139ASRH/PROTO
INTERNAL
MKT. NUMBER
IS9-139ASRH-Q
IS9-139ASRH-8
IS9-139ASEH-Q
IS9-139ASRH/PROTO
TEMP. RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
K20.A
K20.A
K20.A
K20.A
PACKAGE
DRAWING NUMBER
FN9000 Rev 4.00
April 6, 2012
Page 1 of 2
IS-139ASRH, IS-139ASEH
Die Characteristics
DIE DIMENSIONS
3750µm x 4510µm (148 mils x 178 mils)
483µm
25.4µm (19 mils
1 mil)
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
INTERFACE MATERIALS
Glassivation
Type: Silox (SiO
2
)
Thickness: 8.0kÅ
1.0kÅ
Top Metallization
Type: AlSiCu
Thickness: 16.0kÅ
2kÅ
Substrate
Radiation Hardened Silicon Gate, Dielectric Isolation
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 10
5
A/cm
2
Transistor Count
644
Metallization Mask Layout
IS-139ASRH, IS-139ASEH
VCC
OUTA
-INA
+INA
-INB
+INB
-INC
+INC
-IND
+IND
OUTB
OUTC
OUTD
GND
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FN9000 Rev 4.00
April 6, 2012
Page 2 of 2
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