MOSFET N-CHANNEL_55/60V
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 1 week |
| 雪崩能效等级（Eas） | 97 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 45 A |
| 最大漏源导通电阻 | 0.0079 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 180 A |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON |
| IPB45N06S4L08ATMA1 | IPB45N06S4L-08 | IPP45N06S4L08AKSA1 | IPP45N06S4L08AKSA2 | IPI45N06S4L08AKSA3 | |
|---|---|---|---|---|---|
| 描述 | MOSFET N-CHANNEL_55/60V | LED Lighting Drivers High-Brightness LED Matrix Mgr | MOSFET N-CHANNEL_55/60V | MOSFET N-CH 60V 45A PG-TO220-3 | MOSFET N-CHANNEL_55/60V |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | compliant | compliant | compliant | not_compliant | not_compliant |
| 雪崩能效等级（Eas） | 97 mJ | 97 mJ | 97 mJ | 97 mJ | 97 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 45 A | 45 A | 45 A | 45 A | 45 A |
| 最大漏源导通电阻 | 0.0079 Ω | 0.0079 Ω | 0.0079 Ω | 0.0079 Ω | 0.0082 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | TO-263AB | TO-220AB | TO-220AB | TO-262AA |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSIP-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | IN-LINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 180 A | 180 A | 180 A | 180 A | 180 A |
| 表面贴装 | YES | YES | NO | NO | NO |
| 端子形式 | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | - |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | EAR99 |
| Factory Lead Time | 1 week | - | 1 week | 1 week | - |
| 湿度敏感等级 | 1 | 1 | - | 1 | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 是否无铅 | - | 含铅 | - | 不含铅 | 不含铅 |
| JESD-609代码 | - | e3 | - | e3 | e3 |
| 端子面层 | - | TIN | - | Tin (Sn) | Tin (Sn) |
| Base Number Matches | - | - | 1 | 1 | 1 |
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